University of Oulu

Peräntie, J., Hagberg, J., Uusimäki, A., Jantunen, H. (2010) Electric-field-induced dielectric and temperature changes in a⟨011⟩-orientedPb(Mg1/3Nb2/3)O3-PbTiO3single crystal. Physical review B: Condensed matter and materials physics, 82, 134119, doi:10.1103/PhysRevB.82.134119

Electric-field-induced dielectric and temperature changes in a ⟨011⟩-oriented Pb(Mg₁/₃Nb₂/₃)O₃-PbTiO₃ single crystal

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Author: Peräntie, J.1; Hagberg, J.1; Uusimäki, A.1;
Organizations: 1Microelectronics and Materials Physics Laboratories, University of Oulu, P.O. Box 4500, FIN-90014 Oulu, Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 0.4 MB)
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Language: English
Published: American Physical Society, 2010
Publish Date: 2017-08-17


Dielectric and direct temperature changes induced by an electric field were investigated in a ⟨011⟩-oriented 0.72Pb(Mg₁/₃Nb₂/₃)O₃-0.28PbTiO₃ single crystal as a function of temperature. Field-induced temperature changes were measured directly from the surface of the crystal by a thermocouple. Three distinct anomalies at temperatures of ~ 68, ~96, and 128 °C were identified in the dielectric and temperature change responses of the crystal, dividing the temperature range into four distinct phase stability regions with different field-induced behaviors. Just above the depolarization temperature of 128 °C, dielectric hysteresis showed a double-loop nature caused by a reversible nonpolar-polar phase transition accompanied by an increase in the electrocaloric temperature change. Two other reversible field-induced phase transitions with different field-induced thermal behaviors were evidenced in the polarization and temperature responses in the temperature ranges of 96–128 °C and below 68 °C.

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Series: Physical review. B, Condensed matter and materials physics
ISSN: 1098-0121
ISSN-E: 1550-235X
ISSN-L: 1098-0121
Volume: 82
Article number: 134119
DOI: 10.1103/PhysRevB.82.134119
Type of Publication: A1 Journal article – refereed
Field of Science: 114 Physical sciences
216 Materials engineering
Funding: Author J.P. gratefully acknowledges the Graduate School in Electronics, Telecommunications and Automation (GETA), the Foundation of Nokia Corporation, the Jenny and Antti Wihuri Foundation, the Tauno Tönning Foundation, the Ulla Tuominen Foundation, and the Riitta and Jorma J. Takanen Foundation for the financial support of the work.
Copyright information: © 2010 The American Physical Society. Published in this repository with the kind permission of the publisher.