A. Sethi, J. P. Aikio, R. A. Shaheen, R. Akbar, T. Rahkonen and A. Parssinen, "A 10-bit active RF phase shifter for 5G wireless systems," 2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Linkoping, 2017, pp. 1-4.doi: 10.1109/NORCHIP.2017.8124958
A 10-bit active RF phase shifter for 5G wireless systems
|Author:||Sethi, Alok1; Aikio, Janne P.1; Shaheen, Rana A.1;|
1University of Oulu, Finland
|Online Access:||PDF Full Text (PDF, 0.5 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe201801121323
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2018-01-12
This paper presents an active RF phase shifter with 10 bit control word targeted toward the upcoming 5G wireless systems. The circuit is designed and fabricated using 45 nm CMOS SOI technology. An IQ vector modulator (IQVM) topology is used which provides both amplitude and phase control. The design is programmable with exhaustive digital controls available for parameters like bias voltage, resonance frequency, and gain. The frequency of operation is tunable from 12.5 GHz to 15.7 GHz. The mean angular separation between phase points is 1.5 degree at optimum amplitude levels. The rms phase error over the operating band is as low as 0.8 degree. Active area occupied is 0.18 square millimeter. The total DC power consumed from 1 V supply is 75 mW.
2017 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
IEEE Nordic Circuits and Systems Conference
|Type of Publication:||
A4 Article in conference proceedings
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
The research leading to these results has received funding from the Nokia Corporation Ltd. The authors would also like to acknowledge Global Foundries for the silicon processing and technical support.
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