University of Oulu

Huaicheng Xiang, Chunchun Li, Changzhi Yin, Ying Tang, Liang Fang, A reduced sintering temperature and improvement in the microwave dielectric properties of Li2Mg3TiO6 through Ge substitution, Ceramics International, Volume 44, Issue 5, 2018, Pages 5817-5821, ISSN 0272-8842,

A reduced sintering temperature and improvement in the microwave dielectric properties of Li₂Mg₃TiO₆ through Ge substitution

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Author: Xiang, Huaicheng1,2; Li, Chunchun1,3; Yin, Changzhi1;
Organizations: 1Key laboratory of the ministry of education for Nonferrous metals and speci fi c Materials Processing, Guangxi universities key laboratory of non-ferrous metal oxide electronic functional materials and devices, College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China
2Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
3Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
Format: article
Version: accepted version
Access: embargoed
Persistent link:
Language: English
Published: Elsevier, 2018
Publish Date: 2019-12-24
In this paper, we demonstrate a strategy to reduce the sintering temperature of titanates through an appropriate amount of Ge substitution for Ti. A series of Li₂Mg₃Ti1-xGexO₆ (x = 0.04, 0.06, 0.08, 0.10, 0.12) ceramics, prepared by a solid-state reaction method, are reported. By controlling the content of the Ge substitution, the sintering temperature of Li₂Mg₃TiO₆ was significantly reduced to 1140 °C. When x = 0.10, the Li₂Mg₃Ti1-xGexO₆ ceramics sintered at 1140 °C for 6 h displayed excellent values of εr = 13.7, Q × f = 131,500 GHz and τf = −34.2 ppm/°C. In addition, the temperature stability was successfully adjusted to be close to zero by adding CaTiO₃ to form a composite ceramic. A temperature stable ceramic 0.96Li₂Mg₃Ti0.9Ge0.1O₆-0.04CaTiO₃ with τf = −3.5 ppm/°C, εr = 14.9 and Q × f = 68,900 GHz was obtained when sintered at 1180 °C. The good dielectric performances of the CaTiO₃-modified Li₂Mg₃Ti0.9Ge0.1O₆ ceramics makes them possible candidates for substrates in microwave integrated circuits.
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Series: Ceramics international
ISSN: 0272-8842
ISSN-E: 1873-3956
ISSN-L: 0272-8842
Volume: 44
Issue: 5
Pages: 5817 - 5821
DOI: 10.1016/j.ceramint.2017.12.167
Funding: This work was supported by Natural Science Foundation of China (Nos. 51502047, 21561008, and 21761008), the Natural Science Foundation of Guangxi Zhuang Autonomous Region (Nos. 2015GXNSFFA139003, 2016GXNSFBA380134, and 2016GXNSFAA380018), Project of Scientific Research and Technical Exploitation Program of Guilin (2016010702-2), and Innovation Project of Guangxi Graduate Education (YCBZ2017052).
Copyright information: © 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license