X. Shi, S. Posysaev, M. Huttula, V. Pankratov, J. Hoszowska, J.‐Cl. Dousse, F. Zeeshan, Y. Niu, A. Zakharov, T. Li, O. Miroshnichenko, M. Zhang, X. Wang, Z. Huang, S. Saukko, D. L. González, S. van Dijken, M. Alatalo, W. Cao, Small 2018, 14, 1704526. https://doi.org/10.1002/smll.201704526
Metallic contact between MoS₂ and Ni via Au nanoglue
|Author:||Shi, Xinying1; Posysaev, Sergei1; Huttula, Marko1;|
1Nano and Molecular Systems Research Unit, University of Oulu, Oulu, Finland
2Department of Physics, University of Fribourg, Fribourg, Switzerland
3MAX IV Laboratory, Lund University, Lund, Sweden
4College of Chemistry, Key Lab of Environment Friendly Chemistry and Application in Ministry of Education, Xiangtan UniversityXiangtan, China
5Department of Physics, East China University of Science and TechnologyShanghai, China
6School of Mechanical and Automotive Engineering, Anhui Polytechnic UniversityWuhu, China
7Center of Microscopy and Nanotechnology, University of Oulu, Oulu, Finland
8NanoSpin, Department of Applied Physics, Aalto University School of Science, Aalto, Finland
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2018060525279
John Wiley & Sons,
|Publish Date:|| 2019-05-24
A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS₂ matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS₂ crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS₂ complexes. The intrinsic semiconducting property of MoS₂ remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS₂ host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first‐principles calculations. Following the system’s band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor–metal heterojunctions enhance the photocatalytic ability.
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
114 Physical sciences
216 Materials engineering
We acknowledge financial support from Strategic Grant of University of Oulu, National Natural Science Foundation of China (Grant No. 11204079), and the Natural Science Foundation of Shanghai (Grant No. 12ZR1407000). W.C. and M.H. acknowledge the European Regional Development Funding and the Oulu Council. X.S. acknowledges the scholarship sponsored by China Scholarship Council. J.H., J.-Cl.D. and F.Z. acknowledge the financial support of the Swiss National Science Foundation (Grant No. 200020_146739). The authors thank the Center of Microscopy and Nanotechnology of University of Oulu. Computing resources were provided by CSC - IT Centre for Science Ltd. The research leading to these results has received funding from the European Commission’s Seventh Framework Programme (FP7/2007–2013) CALIPSO under Grant Agreement No. 312284.
Supporting Information is available from the Wiley Online Library or from the author.
© 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: X. Shi, S. Posysaev, M. Huttula, V. Pankratov, J. Hoszowska, J.‐Cl. Dousse, F. Zeeshan, Y. Niu, A. Zakharov, T. Li, O. Miroshnichenko, M. Zhang, X. Wang, Z. Huang, S. Saukko, D. L. González, S. van Dijken, M. Alatalo, W. Cao, Small 2018, 14, 1704526. https://doi.org/10.1002/smll.201704526, which has been published in final form at https://doi.org/10.1002/smll.201704526. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving