Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide
|Author:||Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Kostamovaara, Juha T.1|
1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland
2A F Ioffe Physico-Technical Institute, St.Petersburg, Russia
3Dept of Electronic Engineering, University of York, York, UK
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2018111247920
|Publish Date:|| 2019-09-07
We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III–V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.
Semiconductor science and technology
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
© 2018 IOP Publishing Ltd.