University of Oulu

Boris S Ryvkin et al 2018 Semicond. Sci. Technol. 33 105010.

Optical loss suppression in long-wavelength semiconductor lasers at elevated temperatures by high doping of the n-waveguide

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Author: Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Kostamovaara, Juha T.1
Organizations: 1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland
2A F Ioffe Physico-Technical Institute, St.Petersburg, Russia
3Dept of Electronic Engineering, University of York, York, UK
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.3 MB)
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Language: English
Published: IOP Publishing, 2018
Publish Date: 2019-09-07


We show that strong n-doping of the n-waveguide layer substantially decreases the thermal carrier leakage from the active layer and the associated optical losses in III–V semiconductor lasers. The effect is particularly pronounced in devices operating at the wavelength region where the free hole absorption cross-section is much greater than that of free electrons. This is predicted to decrease the threshold current and improve the output efficiency of the lasers. An example of a bulk InGaAsP/InP pulsed lasers is used to demonstrate that lasers with highly doped n-InGaAsP side of the waveguide can retain high output powers at ambient temperatures substantially above room temperature.

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Series: Semiconductor science and technology
ISSN: 0268-1242
ISSN-E: 1361-6641
ISSN-L: 0268-1242
Volume: 33
Issue: 10
Article number: 105010
DOI: 10.1088/1361-6641/aadfb8
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Copyright information: © 2018 IOP Publishing Ltd.