G. Duan, S. N. Vainshtein and J. T. Kostamovaara, "Modified High-Power Nanosecond Marx Generator Prevents Destructive Current Filamentation," in IEEE Transactions on Power Electronics, vol. 32, no. 10, pp. 7845-7850, Oct. 2017. doi: 10.1109/TPEL.2016.2632974
Modified high-power nanosecond Marx generator prevents destructive current filamentation
|Author:||Duan, Guoyong1; Vainshtein , Sergey N.1; Kostamovaara, Juha T.1|
1University of Oulu
|Online Access:||PDF Full Text (PDF, 0.4 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2018113049562
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2018-11-30
A traditional Marx circuit (TMC) based on avalanche transistors with a shortened emitter and a base was investigated numerically by using a two-dimensional (2-D) physics-based approach and experimentally, and compared with a special Marx circuit (SMC) suggested here, in which an intrinsic base triggering of all the stages protects the transistors, especially the second one, from thermal destruction due to current filamentation. This is because the entire emitter-base perimeter in the SMC participates in switching, whereas in a TMC the switching is initiated across the entire area of the emitter but then changes to current filamentation due to certain 3-D transient effects reported earlier. Very significant difference in local transient overheating in the transistors operating in TMC and SMC determines the difference in reliability of those two pulse generators. The results suggest a new circuit design for improving reliability and explain the difference in the operating mode of different transistors in the chain which makes the second transistor most prone to destructive thermal filamentation. This new understanding points additionally to ways of optimizing the design of the transistors to be used in a Marx circuit.
IEEE transactions on power electronics
|Pages:||7845 - 7850|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This work was supported by the Academy of Finland (Centre of Excellence in Laser Scanning Research, contract no. 272196, and contract nos. 255359, 283075 and 251571) and the Finnish Funding Agency for Innovation (TEKES).
|Academy of Finland Grant Number:||
272196 (Academy of Finland Funding decision)
255359 (Academy of Finland Funding decision)
283075 (Academy of Finland Funding decision)
251571 (Academy of Finland Funding decision)
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