University of Oulu

Vainshtein, S., Duan, G., Mikhnev, V., Zemlyakov, V., Egorkin, V., Kalyuzhnyy, N., Maleev, N., Näpänkangas, J., Sequeiros, R., Kostamovaara, J. (2018) Interferometrically enhanced sub-terahertz picosecond imaging utilizing a miniature collapsing-field-domain source. Applied Physics Letters, 112 (19), 191104. doi:10.1063/1.5022453

Interferometrically enhanced sub-terahertz picosecond imaging utilizing a miniature collapsing-field-domain source

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Author: Vainshtein, Sergey N.1; Duan, Guoyong1; Mikhnev, Valeri A.1;
Organizations: 1Oulu University/CAS group
2National Research University of Electronic Technology (MIET)
3Ioffe Physical-Technical Institute
4Saint Petersburg Electrotechnical University “LETI”
5Oulu University Hospital
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 1.1 MB)
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Language: English
Published: American Institute of Physics, 2018
Publish Date: 2018-12-13


Progress in terahertz spectroscopy and imaging is mostly associated with femtosecond laser-driven systems, while solid-state sources, mainly sub-millimetre integrated circuits, are still in an early development phase. As simple and cost-efficient an emitter as a Gunn oscillator could cause a breakthrough in the field, provided its frequency limitations could be overcome. Proposed here is an application of the recently discovered collapsing field domains effect that permits sub-THz oscillations in sub-micron semiconductor layers thanks to nanometer-scale powerfully ionizing domains arising due to negative differential mobility in extreme fields. This shifts the frequency limit by an order of magnitude relative to the conventional Gunn effect. Our first miniature picosecond pulsed sources cover the 100–200 GHz band and promise milliwatts up to ∼500 GHz. Thanks to the method of interferometrically enhanced time-domain imaging proposed here and the low single-shot jitter of ∼1 ps, our simple imaging system provides sufficient time-domain imaging contrast for fresh-tissue terahertz histology.

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Series: Applied physics letters
ISSN: 0003-6951
ISSN-E: 0003-6951
ISSN-L: 0003-6951
Volume: 112
Issue: 19
Article number: 191104
DOI: 10.1063/1.5022453
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Funding: This work was supported by the Academy of Finland and TEKES (Grant Nos. 255359 and 310152), and the strategic TEKES MIWIM project.
Academy of Finland Grant Number: 255359
Detailed Information: 255359 (Academy of Finland Funding decision)
310152 (Academy of Finland Funding decision)
Copyright information: © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (