University of Oulu

S. Vainshtein, V. Zemlyakov, V. Egorkin, A. Maslevtsov and A. Filimonov, "Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers," in IEEE Transactions on Power Electronics, vol. 34, no. 4, pp. 3689-3699, April 2019. doi: 10.1109/TPEL.2018.2853563

Miniature high-power nanosecond laser diode transmitters utilizing simplest avalanche drivers

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Author: Vainshtein, Sergey N.1; Zemlyakov, Valery2; Egorkin, Vladimir2;
Organizations: 1Circuits and Systems CAS, Oulun Yliopisto
2National Research University of Electronic Technology - MIET
3Physical Electronics, Peter the Great St. Petersburg Polytechnic University
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 1.1 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2018121751137
Language: English
Published: Institute of Electrical and Electronics Engineers, 2018
Publish Date: 2018-12-17
Description:

Abstract

The-state-of-the-art in long-distance near-infrared optical radars is the use of laser-diode-based miniature pulsed transmitters producing optical pulses of 3–10 ns in duration and peak power typically below 40W. The duration of the transmitted optical pulses becomes a bottleneck in the task of improving the radar ranging precision, particularly due to the progress made in developing single photon avalanche detectors (SPADs). The speed of miniature high-current drivers is limited by the speed of the semiconductor switch, either a gallium nitride (GaN) field-effect transistor, the most popular alternative nowadays, or a silicon avalanche bipolar junction transistor (ABJT), which was traditional in the past. Recent progress in the physical understanding of peculiar 3-D transients promises further enhancement in speed and efficiency of properly modified ABJTs, but that is not the only factor limiting the transmitter speed. We show here that a low-inductance miniature transmitter assembly containing only a specially developed capacitor, a more advanced transistor chip than that used in commercial ABJTs and a laser diode has allowed peak power from 40 to 180 W to be reached in optical pulses of 1–2 ns in duration without after-pulsing relaxation oscillations. This finding is of interest for compact low-cost, long-distance decimetre-precision lidars, particularly for automotive applications.

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Series: IEEE transactions on power electronics
ISSN: 0885-8993
ISSN-E: 1941-0107
ISSN-L: 0885-8993
Volume: 34
Issue: 4
Pages: 3689 - 3699
DOI: 10.1109/TPEL.2018.2853563
OADOI: https://oadoi.org/10.1109/TPEL.2018.2853563
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: S. V. was supported by Academy of Finland (contract numbers 310152 and 307362); he is also grateful to MNTC of University of Oulu for valuable engineering support. V.Z, V.E, A.M. and A.F. performed this work under a government order from the Ministry of Education and Science of the Russian Federation, project no. 11.5861.2017
Academy of Finland Grant Number: 310152
307362
Detailed Information: 310152 (Academy of Finland Funding decision)
307362 (Academy of Finland Funding decision)
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