H. Ruokamo, H. Rapakko and J. Kostamovaara, "An 80 × 25 pixel CMOS single-photon image sensor with sub-ns time gating for solid state 3D scanning," 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Giardini Naxos, 2017, pp. 365-368. doi: 10.1109/PRIME.2017.7974183
An 80 × 25 pixel CMOS single-photon image sensor with sub-ns time gating for solid state 3D scanning
|Author:||Ruokamo, Henna1; Rapakko, Harri1; Kostamovaara, Juha1|
1Faculty of Information Technology and Electrical Engineering, Circuits and Systems Research Unit, University of Oulu, Finland
|Online Access:||PDF Full Text (PDF, 0.3 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2018122051448
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2018-12-20
Imager topology with sub-ns time gating for 3D distance measurement application and first measurement results of the prototype are presented. The imager has a fully digital operating principle with single-photon avalanche diode detectors and on-chip narrow gating of pixel groups. The prototype detector has 80 × 25 pixels with a fill factor of 34 % in the sensor area. The chip has been fabricated in a 0.35 μm high-voltage process and occupies 5.69 × 5.02 mm2 area.
|Pages:||365 - 368|
2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)
Conference on Ph.D. Research in Microelectronics and Electronics
|Type of Publication:||
A4 Article in conference proceedings
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
The authors acknowledge financial support from the Academy of Finland (Centre of Excellence in Laser Scanning Research) and the Infotech Oulu Graduate School.
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