J. Nissinen, I. Nissinen, S. Jahromi, T. Talala and J. Kostamovaara, "Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging," 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, Estonia, 2018, pp. 1-4. doi: 10.1109/NORCHIP.2018.8573525
Time-gated CMOS SPAD and a quantum well laser diode with a CMOS driver for time-resolved diffuse optics imaging
|Author:||Nissinen, J.1; Nissinen, I.1; Jahromi, S.1;|
1University of Oulu, Circuits and Systems Research Unit, Oulu, Finland
|Online Access:||PDF Full Text (PDF, 0.9 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe201901101935
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2019-01-10
Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was ∼50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).
|Pages:||1 - 4|
2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC),30-31 October 2018, Tallinn, Estonia
IEEE Nordic Circuits and Systems Conference
|Type of Publication:||
A4 Article in conference proceedings
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This work was supported by Academy of Finland, Centre of Excellence in Laser Scanning Research under Contract 307362 and Contracts 292609, 282405 and 314404.
|Academy of Finland Grant Number:||
292609 (Academy of Finland Funding decision)
282405 (Academy of Finland Funding decision)
314404 (Academy of Finland Funding decision)
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