Krupka J, Shakhil PG, Arun NS, Ratheesh R, Jantunen H, Kim HT, Sebastian MT, Low loss polypropylene-silicon composites for millimetre wave applications, Materials Research Bulletin (2010), https://doi.org/10.1016/j.materresbull.2018.03.047
Low loss polypropylene-silicon composites for millimetre wave applications
|Author:||Krupka, J.1; Shakhil, P.2; Arun, N.2;|
1Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
2Centre for Materials for Electronics Technology, CMET, Thrissur, 680581 India
3Centre for Materials for Electronics Technology, CMET, Thrissur,680581 India
4Microelectronics Research Unit, University of Oulu, FI90014 Finland
5Electronic Convergence Materials Division, Korean Institute for Ceramic Engineering and Technology 101 Soho-ro, Jinju-si, 52851 South Korea
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe201902114533
|Publish Date:|| 2020-03-28
Polypropylene-silicon composite laminates were fabricated via hot pressing and their dielectric properties up to 35 GHz were studied. The loss tangent was found to decrease with increasing frequency whereas an increasing trend of loss tangent has previously been reported in the literature for such composites. The decreasing trend of the loss tangent with frequency is due to the decreasing conductor loss of silicon (Si) and indicates the possibility for use in high frequency applications such as the Internet Of Things and 5 t h generation wireless communication. The composite containing 25 vol% of Si had a relative permittivity of 3.5 and a loss tangent of 0.001 at 35 GHz. The coefficient of thermal expansion and the thermal conductivity of 40 vol% Si loaded composites were 51 ppm/oC and 2.23 W/mK, respectively. The thermal conductivity of the composite increased by 163% and 913% for 25 and 40 vol% Si addition, respectively.
Materials research bulletin
|Pages:||143 - 148|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
216 Materials engineering
213 Electronic, automation and communications engineering, electronics
One of the authors (MTS) is grateful to KOFST South Korea for financial assistance.
The authors are grateful to S H Lee for the TC measurements.
© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/.