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M. H. Montaseri, J. Aikio, T. Rahkonen and A. Pärssinen, "Design of Stacked-MOS Transistor mm-Wave Class C Amplifiers for Doherty Power Amplifiers," 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, 2018, pp. 1-5. doi: 10.1109/NORCHIP.2018.8573519

Design of stacked-MOS transistor mm-wave class C amplifiers for Doherty power amplifiers

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Author: Montaseri, Mohammad Hassan1; Aikio, Janne1; Rahkonen, Timo1;
Organizations: 1RF/mm-wave Circuits and Systems, Center for Wireless Communications, Department of Information Technology and Electrical Engineering, University of Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.4 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe201902134757
Language: English
Published: Institute of Electrical and Electronics Engineers, 2018
Publish Date: 2019-02-13
Description:

Abstract

This paper discusses the design requirements of class C auxiliary (aux) amplifiers deployed in Doherty power amplifiers (DPA). Taking conduction angle and back-off (BO) level into account a global design chart is presented which can be utilized to properly dimension the aux amplifier. Based on the proposed method a class C power amplifier is designed and exploited in a DPA circuit at 28GHz which is evaluated using simulations based on 45nm CMOS technology. Simulations reveal 27dBm saturated output power, 60% maximum drain efficiency (DE), 45% DE at 6dB BO, and 2 times efficiency enhancement at 6dB BO which is a new record in this trend.

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ISBN: 978-1-5386-7656-1
ISBN Print: 978-1-5386-7657-8
Article number: 8573519
DOI: 10.1109/NORCHIP.2018.8573519
OADOI: https://oadoi.org/10.1109/NORCHIP.2018.8573519
Host publication: 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Conference: IEEE Nordic Circuits and Systems Conference
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
CMOS integrated circuits
Doherty power amplifier
class C amplifier
millimeter wave integrated circuits
Article
Funding: The authors would like to express their gratitude to InfoTech Oulu Doctoral Program, Finnish Funding Agency for Technology and Innovation (Tekes), Nokia, Esju and CoreHW for their support. This work was also supported in part by the Academy of Finland 6Genesis Flagship (grant no. 318927).
Academy of Finland Grant Number: 318927
Detailed Information: 318927 (Academy of Finland Funding decision)
Copyright information: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.