University of Oulu

J. Appl. Phys. 125, 023108 (2019); https://doi.org/10.1063/1.5055021

Effect of spatial hole burning on output characteristics of high power edge emitting semiconductor lasers : a universal analytical estimate and numerical analysis

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Author: Avrutin, Eugene A.1; Ryvkin, Boris S.2,3
Organizations: 1Department of Electronic Engineering, University of York, York, United Kingdom
2A F Ioffe Physico-Technical Institute, St. Petersburg, Russia
3Department of Electrical and Information Engineering, University of Oulu, Oulu, Finland
Format: article
Version: published version
Access: embargoed
Persistent link: http://urn.fi/urn:nbn:fi-fe2019040911659
Language: English
Published: American Institute of Physics, 2019
Publish Date: 2020-01-11
Description:

Abstract

The effect of longitudinal spatial hole burning on the performance of a semiconductor laser with a strongly asymmetric resonator is investigated numerically. The effects of spatial hole burning on, firstly, the non-stimulated recombination in the laser (quantified as an increased effective threshold current) and, secondly, the output efficiency are calculated and compared, and the latter is shown to dominate at high currents. It is shown that the output efficiency at high pumping levels in the presence of the spatial hole burning effect can be estimated using the standard expression as the ratio of output loss to total loss, but with the internal loss enhanced by a factor greater than one and independent on the injection level. A simple universal expression for this factor for a highly asymmetric cavity, as a function of the output mirror reflectance, is obtained and compared to numerical results, with good agreement.

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Series: Journal of applied physics
ISSN: 0021-8979
ISSN-E: 1089-7550
ISSN-L: 0021-8979
Volume: 125
Issue: 2
Article number: 023108
DOI: 10.1063/1.5055021
OADOI: https://oadoi.org/10.1063/1.5055021
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Copyright information: © 2018 Author(s). Published under license by AIP Publishing.