University of Oulu

B S Ryvkin et al 2017 Semicond. Sci. Technol. 32 025015. doi: 10.1088/1361-6641/32/2/025015

Laser diode structures with a saturable absorber for high-energy picosecond optical pulse generation by combined gain-and Q-switching

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Author: Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Kostamovaara, Johanna E.K.1;
Organizations: 1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland
2A.F. Ioffe Physico-Technical Institute, St.Petersburg, Russia
3Dept of Electronics, University of York, York, UK
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 1.5 MB)
Persistent link:
Language: English
Published: IOP Publishing, 2017
Publish Date: 2019-04-15


The performance of gain-switched Fabry-Perot asymmetric-waveguide semiconductor lasers with a large equivalent spot size and an intracavity saturable absorber was investigated experimentally and theoretically. The laser with a short (~ 20 μm) absorber emitted high-energy afterpulse-free optical pulses in a broad range of injection current pulse amplitudes; optical pulses with a peak power of about 35 W and a duration of about 80 ps at half maximum were achieved with a current pulse with an amplitude of just 8 A and a duration of 1.5 ns. Good quality pulsations were observed in a broad range of elevated temperatures. The introduction of a substantially longer absorber section lead to strong spectral broadening of the output without a significant improvement to pulse energy and peak power.

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Series: Semiconductor science and technology
ISSN: 0268-1242
ISSN-E: 1361-6641
ISSN-L: 0268-1242
Volume: 32
Issue: 2
Article number: 025015
DOI: 10.1088/1361-6641/32/2/025015
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Funding: This work was supported by the Academy of Finland (Centre of Excellence in Laser Scanning Research, contract no. 272196, and contract nos. 255359, 283075 and 251571) and the Finnish Funding Agency for Innovation (TEKES).
Academy of Finland Grant Number: 255359
Detailed Information: 255359 (Academy of Finland Funding decision)
283075 (Academy of Finland Funding decision)
251571 (Academy of Finland Funding decision)
Copyright information: © 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at