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Boris S Ryvkin et al 2017 Semicond. Sci. Technol. 32 125008. doi: 10.1088/1361-6641/aa92fd Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range |
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| Author: | Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Kostamovaara, Juha T.1 |
| Organizations: |
1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland 2A F Ioffe Physico-Technical Institute, St.Petersburg, Russia 3Dept of Electronics, University of York, York, UK |
| Format: | article |
| Version: | accepted version |
| Access: | open |
| Online Access: | PDF Full Text (PDF, 0.8 MB) |
| Persistent link: | http://urn.fi/urn:nbn:fi-fe2019041512341 |
| Language: | English |
| Published: |
IOP Publishing,
2017
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| Publish Date: | 2019-04-15 |
| Description: |
AbstractAn analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide. see all
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| Series: |
Semiconductor science and technology |
| ISSN: | 0268-1242 |
| ISSN-E: | 1361-6641 |
| ISSN-L: | 0268-1242 |
| Volume: | 32 |
| Issue: | 12 |
| Article number: | 125008 |
| DOI: | 10.1088/1361-6641/aa92fd |
| OADOI: | https://oadoi.org/10.1088/1361-6641/aa92fd |
| Type of Publication: |
A1 Journal article – refereed |
| Field of Science: |
213 Electronic, automation and communications engineering, electronics |
| Subjects: | |
| Funding: |
This work was supported in part by the Academy of Finland (Centre of Excellence in Laser Scanning Research, contract nos. 283075 and 263705) |
| Academy of Finland Grant Number: |
283075 263705 |
| Detailed Information: |
283075 (Academy of Finland Funding decision) 263705 (Academy of Finland Funding decision) |
| Copyright information: |
© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aa92fd. |