University of Oulu

Mamedov, H.M., Kukevecz, A., Konya, Z. et al. Russ Phys J (2019) 61: 1660. https://doi.org/10.1007/s11182-018-1584-2

Electrical and photoelectrical characteristics of с-Si/porous–Si/CdS heterojunctions

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Author: Mamedov, H. M.1; Kukevecz, A.2; Konya, Z.2;
Organizations: 1Baku State University, Baku, Azerbaijan Republic
2University of Szeged, Szeged, Hungary
3University of Oulu, Oulu, Finland
4University of Delaware, Newark, USA
5Azerbaijan State University of Economics, Baku, Azerbaijan Republic
Format: article
Version: accepted version
Access: embargoed
Persistent link: http://urn.fi/urn:nbn:fi-fe2019052016076
Language: English
Published: Springer Nature, 2019
Publish Date: 2020-01-01
Description:

Abstract

Depending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions.

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Series: Russian physics journal
ISSN: 1064-8887
ISSN-E: 1573-9228
ISSN-L: 1064-8887
Volume: 61
Issue: 9
Pages: 1660 - 1666
DOI: 10.1007/s11182-018-1584-2
OADOI: https://oadoi.org/10.1007/s11182-018-1584-2
Type of Publication: A1 Journal article – refereed
Field of Science: 216 Materials engineering
116 Chemical sciences
Subjects:
Copyright information: © 2019 Springer Science+Business Media, LLC. This is a post-peer-review, pre-copyedit version of an article published in Russian Physics Journal. The final authenticated version is available online at: https://doi.org/10.1007/s11182-018-1584-2.