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Electrical and photoelectrical characteristics of с-Si/porous–Si/CdS heterojunctions |
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| Author: | Mamedov, H. M.1; Kukevecz, A.2; Konya, Z.2; |
| Organizations: |
1Baku State University, Baku, Azerbaijan Republic 2University of Szeged, Szeged, Hungary 3University of Oulu, Oulu, Finland
4University of Delaware, Newark, USA
5Azerbaijan State University of Economics, Baku, Azerbaijan Republic |
| Format: | article |
| Version: | accepted version |
| Access: | open |
| Online Access: | PDF Full Text (PDF, 0.5 MB) |
| Persistent link: | http://urn.fi/urn:nbn:fi-fe2019052016076 |
| Language: | English |
| Published: |
Springer Nature,
2019
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| Publish Date: | 2020-01-01 |
| Description: |
AbstractDepending on the sizes of the CdS crystallites and silicon pores, electrical and photoelectrical characteristics of c-Si/porous–Si/CdS heterojunctions prepared by electrochemical deposition and anodization, respectively, are studied. The optimal pore size (10–16 nm) is determined, which provides the maximum photoelectric conversion efficiency (7.71%) of heterojunctions. see all
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| Series: |
Russian physics journal |
| ISSN: | 1064-8887 |
| ISSN-E: | 1573-9228 |
| ISSN-L: | 1064-8887 |
| Volume: | 61 |
| Issue: | 9 |
| Pages: | 1660 - 1666 |
| DOI: | 10.1007/s11182-018-1584-2 |
| OADOI: | https://oadoi.org/10.1007/s11182-018-1584-2 |
| Type of Publication: |
A1 Journal article – refereed |
| Field of Science: |
216 Materials engineering 116 Chemical sciences |
| Subjects: | |
| Copyright information: |
© 2019 Springer Science+Business Media, LLC. This is a post-peer-review, pre-copyedit version of an article published in Russian Physics Journal. The final authenticated version is available online at: https://doi.org/10.1007/s11182-018-1584-2. |