High photoresponse of individual WS₂ nanowire-nanoflake hybrid materials |
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Author: | Asres, Georgies Alene1; Järvinen, Topias1; Lorite, Gabriela S.1; |
Organizations: |
1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland 2VTT Finland, P.O. Box 1100, FI-90571 Oulu, Finland 3Sensor and Actuator Systems, Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
4Department of Material Science and NanoEngineering, Rice University, Houston, Texas 77005, USA
5Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA 6Department of Physics, Southern Illinois University, Carbondale, Illinois 62901, USA |
Format: | article |
Version: | accepted version |
Access: | open |
Online Access: | PDF Full Text (PDF, 0.6 MB) |
Persistent link: | http://urn.fi/urn:nbn:fi-fe2019052016095 |
Language: | English |
Published: |
American Institute of Physics,
2017
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Publish Date: | 2019-05-20 |
Description: |
Abstractvan der Waals solids have been recognized as highly photosensitive materials that compete conventional Si and compound semiconductor based devices. While 2-dimensional nanosheets of single and multiple layers and 1-dimensional nanowires of molybdenum and tungsten chalcogenides have been studied, their nanostructured derivatives with complex morphologies are not explored yet. Here, we report on the electrical and photosensitive properties of WS₂ nanowire-nanoflake hybrid materials we developed lately. We probe individual hybrid nanostructured particles along the structure using focused ion beam deposited Pt contacts. Further, we use conductive atomic force microscopy to analyze electrical behavior across the nanostructure in the transverse direction. The electrical measurements are complemented by in situ laser beam illumination to explore the photoresponse of the nanohybrids in the visible optical spectrum. Photodetectors with responsivity up to ∼0.4 AW⁻¹ are demonstrated outperforming graphene as well as most of the other transition metal dichalcogenide based devices. see all
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Series: |
Applied physics letters |
ISSN: | 0003-6951 |
ISSN-E: | 0003-6951 |
ISSN-L: | 0003-6951 |
Volume: | 112 |
Issue: | 23 |
Article number: | 233103 |
DOI: | 10.1063/1.5030490 |
OADOI: | https://oadoi.org/10.1063/1.5030490 |
Type of Publication: |
A1 Journal article – refereed |
Field of Science: |
213 Electronic, automation and communications engineering, electronics 216 Materials engineering 221 Nanotechnology |
Subjects: | |
Funding: |
Funding received from the Academy of Finland (Suplacat), University of Oulu (More than Moore Research Community), and University of Oulu Graduate School (Infotech Oulu) is acknowledged. |
Copyright information: |
© 2018 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters 2018 112:23 and may be found at https://doi.org/10.1063/1.5030490. |