Abstract

Structural, interfacial, optical, and transport properties of large-area MoS₂ ultra-thin films on BN-buffered silicon substrates fabricated using magnetron sputtering are investigated. A relatively simple growth strategy is demonstrated here that simultaneously promotes superior interfacial and bulk MoS₂ properties. Few layers of MoS₂ are established using x-ray reflectivity, diffraction, ellipsometry, and Raman spectroscopy measurements. Layer-specific modeling of optical constants show very good agreement with first-principles calculations. Conductivity measurements reveal that few-layer MoS₂ films are more conducting than many-layer films. Photo-conductivity measurements reveal that the sputter deposited MoS₂ films compare favorably with other large-area methods. Our work illustrates that sputtering is a viable route for large-area device applications using transition metal dichalcogenides.