J. P. Aikio, M. Hietanen, N. Tervo, T. Rahkonen and A. Pärssinen, "Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology," 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/PAWR.2019.8708719
Ka-band 3-stack power amplifier with 18.8 dBm Psat and 23.4 % PAE using 22nm CMOS FDSOI technology
|Author:||Aikio, Janne P.1; Hietanen, Mikko1; Tervo, Nuutti1;|
1University of Oulu, Department of Information Technology and Electrical Engineering, Oulu, 90014, Finland
|Online Access:||PDF Full Text (PDF, 0.6 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2019081223985
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2019-08-12
This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.
|Pages:||1 - 3|
2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). Orlando, FL, USA, Jan 20-23 2019
IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
|Type of Publication:||
A4 Article in conference proceedings
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This research has been financially supported by the Nokia Corporation Ltd and Academy of Finland 6Genesis Flagship (grant 318927). The authors would also like to acknowledge Global Foundries for the silicon processing and technical support.
|Academy of Finland Grant Number:||
318927 (Academy of Finland Funding decision)
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