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J. P. Aikio, M. Hietanen, N. Tervo, T. Rahkonen and A. Pärssinen, "Ka-Band 3-Stack Power Amplifier with 18.8 dBm Psat and 23.4 % PAE Using 22nm CMOS FDSOI Technology," 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/PAWR.2019.8708719

Ka-band 3-stack power amplifier with 18.8 dBm Psat and 23.4 % PAE using 22nm CMOS FDSOI technology

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Author: Aikio, Janne P.1; Hietanen, Mikko1; Tervo, Nuutti1;
Organizations: 1University of Oulu, Department of Information Technology and Electrical Engineering, Oulu, 90014, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.6 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2019081223985
Language: English
Published: Institute of Electrical and Electronics Engineers, 2019
Publish Date: 2019-08-12
Description:

Abstract

This paper presents a fully integrated, three-stack power amplifier for 5G wireless systems, designed and fabricated using 22nm CMOS FDSOI technology. The frequency of operation is from 25 GHz to 30.5 GHz, with a maximum 3 dB bandwidth of 5.5 GHz and a maximum gain of 9.9 dB. Maximum RF output power, power-added efficiency (PAE) and output 1 dB compression point are 18.8 dBm, 23.4% and 14.9dBm, respectively, achieved at 28.5 GHz.

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ISBN: 978-1-5386-5947-2
ISBN Print: 978-1-5386-5948-9
Pages: 1 - 3
DOI: 10.1109/PAWR.2019.8708719
OADOI: https://oadoi.org/10.1109/PAWR.2019.8708719
Host publication: 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). Orlando, FL, USA, Jan 20-23 2019
Conference: IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Article
Funding: This research has been financially supported by the Nokia Corporation Ltd and Academy of Finland 6Genesis Flagship (grant 318927). The authors would also like to acknowledge Global Foundries for the silicon processing and technical support.
Academy of Finland Grant Number: 318927
Detailed Information: 318927 (Academy of Finland Funding decision)
Copyright information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.