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Increasing output power of pulsed-eye safe wavelength range laser diodes by strong doping of the n-optical confinement layer |
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| Author: | Avrutin, Eugene A.1; Ryvkin, Boris S.2,3; Kostamovaara, Juha T.2 |
| Organizations: |
1Dept of Electronic Engineering, University of York, YO10 5DD UK 2Dept of Electrical and Information Engineering, University of Oulu, Oulu FI-90014, Finland 3A.F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia |
| Format: | article |
| Version: | accepted version |
| Access: | open |
| Online Access: | PDF Full Text (PDF, 0.2 MB) |
| Persistent link: | http://urn.fi/urn:nbn:fi-fe2019082024803 |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2017
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| Publish Date: | 2019-08-20 |
| Description: |
AbstractA semi-analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption. The resulting losses are shown to be substantially lower than those in a similar, but weakly doped structure. Thus a significant improvement in the output power and efficiency by strong n-doping is predicted. see all
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| Series: |
IEEE High Power Diode Lasers and Systems Conference |
| ISSN: | 2379-0385 |
| ISSN-E: | 2379-0393 |
| ISSN-L: | 2379-0385 |
| ISBN: | 978-1-5386-3263-5 |
| ISBN Print: | 978-1-5386-3264-2 |
| Pages: | 17 - 18 |
| DOI: | 10.1109/HPD.2017.8261082 |
| OADOI: | https://oadoi.org/10.1109/HPD.2017.8261082 |
| Host publication: |
Proceedings of the 2017 High Power Diode Lasers and Systems Conference (HPD) |
| Conference: |
High Power Diode Lasers and Systems Conference |
| Type of Publication: |
A4 Article in conference proceedings |
| Field of Science: |
213 Electronic, automation and communications engineering, electronics |
| Subjects: | |
| Copyright information: |
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