University of Oulu

Topias Järvinen et al 2019 Nanotechnology 30 405501. doi: https://doi.org/10.1088/1361-6528/ab2d48

WS₂ and MoS₂ thin film gas sensors with high response to NH₃ in air at low temperature

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Author: Järvinen, Topias1; Lorite, Gabriela S.1; Peräntie, Jani1;
Organizations: 1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering,University of Oulu, PO Box 4500, FI-90014 University of Oulu, Finland
2VTT Technical Research Center of Finland, PO Box 1100, FI-90571, Oulu, Finland
3Research Unit of Medical Imaging, Physics and Technology, Faculty of Medicine, University of Oulu,PO Box 5000, FI-90014 University of Oulu, Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 1.3 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2019100130680
Language: English
Published: IOP Publishing, 2019
Publish Date: 2019-10-01
Description:

Abstract

Transition metal dichalcogenides (TMDs) have received immense research interest in particular for their outstanding electrochemical and optoelectrical properties. Lately, chemical gas sensor applications of TMDs have been recognized as well owing to the low operating temperatures of devices, which is a great advantage over conventional metal oxide based sensors. In this work, we elaborate on the gas sensing properties of WS₂ and MoS₂ thin films made by simple and straightforward thermal sulfurization of sputter deposited metal films on silicon chips. The sensor response to H₂, H₂S, CO and NH₃ analytes in air at 30 °C has been assessed and both MoS₂ and WS₂ were found to have an excellent selectivity to NH₃ with a particularly high sensitivity of 0.10 ± 0.02 ppm⁻¹ at sub-ppm concentrations in the case of WS₂. The sensing behavior is explained on the bases of gas adsorption energies as well as carrier (hole) localization induced by the surface adsorbed moieties having reductive nature.

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Series: Nanotechnology
ISSN: 0957-4484
ISSN-E: 1361-6528
ISSN-L: 0957-4484
Volume: 30
Issue: 40
Article number: 405501
DOI: 10.1088/1361-6528/ab2d48
OADOI: https://oadoi.org/10.1088/1361-6528/ab2d48
Type of Publication: A1 Journal article – refereed
Field of Science: 216 Materials engineering
213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: Support received from the Väisälä Foundation, Riitta and Jorma J. Takanen Foundation, Academy of Finland (298409), University of Oulu (Project: Entity) and European Union Interreg Nord – Lapin liitto (Project: Transparent, conducting and flexible films for electrodes) are acknowledged. Kai Metsäkoivu (Center of Microscopy and Nanotechnology, University of Oulu) is acknowledged for the metal films deposition.
Academy of Finland Grant Number: 298409
Detailed Information: 298409 (Academy of Finland Funding decision)
Copyright information: © 2019 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
  https://creativecommons.org/licenses/by/3.0/