University of Oulu

Vainshtein, S. N., Duan, G., Yuferev, V. S., Zemlyakov, V. E., Egorkin, V. I., Kalyuzhnyy, N. A., Maleev, N. A., Egorov, A. Yu., Kostamovaara, J. T. (2019) Collapsing-field-domain-based 200 GHz solid-state source. Applied Physics Letters, 115 (12), 123501.

Collapsing-field-domain-based 200 GHz solid-state source

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Author: Vainshtein, Sergey N.1; Duan, Guoyong1; Yuferev, Valentin S.2;
Organizations: 1Oulu University/CAS Group, Erkki Koiso-Kanttila Street 3, FIN-90014 Oulu, Finland
2Ioffe Institute, Politehnicheskaya 26, 194021 St. Petersburg, Russian Federation
3National Research University of Electronic Technology (MIET), Shokin Square 1, 124498 Moscow, Russian Federation
4ITMO University, Kronverkskiy Av.49, 197101 Saint-Petersburg, Russian Federation
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 1.5 MB)
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Language: English
Published: American Institute of Physics, 2019
Publish Date: 2019-10-02


A simple miniature source generating pulse trains with a central frequency of ∼100 GHz and a duration of 50–100 ps has been demonstrated recently. The source is based on nanometer-scale collapsing field domains (CFDs) generated in the collector of an avalanching bipolar GaAs transistor. The central frequency is determined by the domain transient time across the collector, and thus, a routine increase in the oscillation frequency from 0.1 to 0.3–0.5 THz would require a reduction in the collector thickness by a factor of 3–5. This is not acceptable, however, since it would reduce the maximum blocking voltage affecting the achievable peak current across the avalanche switch. We suggest here a solution to this challenging problem by reducing the CFD travel distance while keeping the collector thickness unchanged. Here, the discovered and interpreted phenomenon of CFD collapse when entering a dense carrier plasma zone made it possible by means of bandgap engineering. A CFD emitter generating ∼200 GHz wavetrains of ∼100 ps in duration is demonstrated. This finding opens an avenue for the increase in the oscillation frequency without any reduction in the emitted power, by using a smart structure design.

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Series: Applied physics letters
ISSN: 0003-6951
ISSN-E: 0003-6951
ISSN-L: 0003-6951
Volume: 115
Issue: 12
Article number: 123501
DOI: 10.1063/1.5091616
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Funding: S.V., G.D., and J.T. were supported by the Academy of Finland (Grants Nos. 307362 and 310152).
Academy of Finland Grant Number: 307362
Detailed Information: 307362 (Academy of Finland Funding decision)
310152 (Academy of Finland Funding decision)
Copyright information: © 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (