Rodner, M., Bastuck, M., Schütze, A., Andersson, M., Huotari, J., Puustinen, J., Lappalainen, J., and Sauerwald, T.: Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide, J. Sens. Sens. Syst., 8, 261–267, https://doi.org/10.5194/jsss-8-261-2019, 2019
Enabling a new method of dynamic field-effect gas sensor operation through lithium-doped tungsten oxide
|Author:||Rodner, Marius1; Bastuck, Manuel1,2; Schütze, Andreas2;|
1Department of Physics, Chemistry and Biology, Linköping University, Linköping, 58183, Sweden
2Lab for Measurement Technologies, University of Saarland, Saarbrücken, 66123, Germany
3Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, 90014, Finland
|Online Access:||PDF Full Text (PDF, 0.9 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2019101633136
|Publish Date:|| 2019-10-16
To fulfil today’s requirements, gas sensors have to become more and more sensitive and selective. Temperature-cycled operation has long been used to enhance the sensitivity and selectivity of metal-oxide semiconductor gas sensors and, more recently, silicon-carbide-based, gas-sensitive field-effect transistors (SiC-FETs). In this work, we present a novel method to significantly enhance the effect of gate bias on a SiC-FET’s response, giving rise to new possibilities for static and transient signal generation and, thus, increased sensitivity and selectivity. A tungsten trioxide (WO₃) layer is deposited via pulsed laser deposition as an oxide layer beneath a porous iridium gate, and is doped with 0.1 AT % of lithium cations. Tests with ammonia as a well-characterized model gas show a relaxation effect with a time constant between 20 and 30 s after a gate bias step as well as significantly increased response and sensitivity at +2 V compared to 0 V. We propose an electric field-mediated change in oxygen surface coverage as the cause of this novel effect.
Journal of sensors and sensor systems
|Pages:||261 - 267|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
We have received support for scientific exchange from the European Cooperation in Science and Technology and support for Open Access Publishing from the Deutsche Forschungsgemeinschaft and Saarland University.
© Author(s) 2019. This work is distributed under the Creative Commons Attribution 4.0 License.