University of Oulu

Sliz, R., Lejay, M., Fan, J., Choi, M., Kinge, S., Hoogland, S., Fabritius, T., García de Arquer, F., Sargent, E. (2019) Stable Colloidal Quantum Dot Inks Enable Inkjet-Printed High-Sensitivity Infrared Photodetectors. ACS Nano, 13 (10), 11988-11995.

Stable colloidal quantum dot inks enable inkjet-printed high-sensitivity infrared photodetectors

Saved in:
Author: Sliz, Rafal1,2; Lejay, Marc1; Fan, James Z.1;
Organizations: 1Department of Electrical and Computing Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canada
2Optoelectronics and Measurement Techniques Unit, University of Oulu, 90570 Oulu, Finland
3Advanced Technology Div., Hoge Wei 33, Toyota Technical Centre, B-1930 Zaventem, Belgium
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 1 MB)
Persistent link:
Language: English
Published: American Chemical Society, 2019
Publish Date: 2020-09-23


Colloidal quantum dots (CQDs) have recently gained attention as materials for manufacturing optoelectronic devices in view of their tunable light absorption and emission properties and compatibility with low-temperature thin-film manufacture. The realization of CQD inkjet-printed infrared photodetectors has thus far been hindered by incompatibility between the chemical processes that produce state-of-the-art CQD solution-exchanged inks and the requirements of ink formulations for inkjet materials processing. To achieve inkjet-printed CQD solids with a high degree of reproducibility, as well as with the needed morphological and optoelectronic characteristics, we sought to overcome the mismatch among these processing conditions. In this study, we design CQD inks by simultaneous evaluation of requirements regarding ink colloidal stability, jetting conditions, and film morphology for different dots and solvents. The new inks remain colloidally stable, achieved through a design that suppresses the reductant properties of amines on the dots’ surface. After drop ejection from the nozzle, the quantum dot material is immobilized on the substrate surface due to the rapid evaporation of the low boiling point amine-based compound. Concurrently, the high boiling point solvent allows for the formation of a thin film of high uniformity, as is required for the fabrication of high-performance IR photodetectors. We fabricate inkjet-printed photodetectors exhibiting the highest specific detectivities reported to date (above 10¹² Jones across the IR) in an inkjet-printed quantum dot film. As a patternable CMOS-compatible process, the work offers routes to integrated sensing devices and systems.

see all

Series: ACS nano
ISSN: 1936-0851
ISSN-E: 1936-086X
ISSN-L: 1936-0851
Volume: 13
Issue: 10
Pages: 11988 - 11995
DOI: 10.1021/acsnano.9b06125
Type of Publication: A1 Journal article – refereed
Field of Science: 221 Nanotechnology
Funding: This research was supported by the postdoctoral research fellow grant of the Academy of Finland (grant no. 296890) and Toyota Motors Europe. The authors also express their gratitude for the financial support received from the Academy of Finland’s FIRI funding (grant no. 320017) and the University of Oulu Innovation Center PoC funding. J.Z.F. was funded by the Natural Sciences and Engineering Research Council of Canada (NSERC) Alexander Graham Bell Canada Graduate Scholarships (CGS-D), Materials for Enhanced Energy Technologies (MEET) scholarships, and the NSERC Collaborative Research and Training Experience (CREATE) program grant number 466083.
Academy of Finland Grant Number: 296890
Detailed Information: 296890 (Academy of Finland Funding decision)
320017 (Academy of Finland Funding decision)
Copyright information: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see