Ka-band stacked power amplifier on 22 nm CMOS FDSOI technology utilizing back-gate bias for linearity improvement |
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Author: | Rusanen, Jere1; Hietanen, Mikko1; Sethi, Alok1; |
Organizations: |
1University of Oulu, Finland |
Format: | article |
Version: | accepted version |
Access: | open |
Online Access: | PDF Full Text (PDF, 0.5 MB) |
Persistent link: | http://urn.fi/urn:nbn:fi-fe2019121748458 |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers,
2019
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Publish Date: | 2019-12-17 |
Description: |
AbstractThis paper presents a method for extending millimeter wave power amplifier (PA) linear range by fine tuning the CMOS SOI device output characteristics via back-gate biasing. The effect of back-gate biasing to PA performance is measured and reported. It is demonstrated how implementing the same bias point with different back-gate values affects the linear range of the fabricated PA. By applying positive back-bias to the NFET devices, the measured PA displays minimum AM-PM and reaches maximum output power, PAE and 1 dB compression point of 16.3 dBm, 23 % and 13.9 dBm, respectively. EVM of 6.8 % and ACLR of −29.3 dBC were achieved at 5 dBm average output channel power with a 100MHz 64-QAM OFDM signal. see all
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ISBN: | 978-1-7281-2769-9 |
ISBN Print: | 978-1-7281-2770-5 |
Pages: | 1 - 4 |
DOI: | 10.1109/NORCHIP.2019.8906915 |
OADOI: | https://oadoi.org/10.1109/NORCHIP.2019.8906915 |
Host publication: |
2019 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) |
Conference: |
IEEE Nordic Circuits and Systems Conference |
Type of Publication: |
A4 Article in conference proceedings |
Field of Science: |
213 Electronic, automation and communications engineering, electronics |
Subjects: | |
Funding: |
This research has been financially supported by Academy of Finland 6Genesis Flagship (grant 318927) and Infotech Oulu. |
Academy of Finland Grant Number: |
318927 |
Detailed Information: |
318927 (Academy of Finland Funding decision) |
Copyright information: |
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