University of Oulu
Oulu University Library
OuluCRIS
Laturi
Muuntaja

Similar Items

Cover Image

M. Hietanen, J. Aikio, R. Akbar, T. Rahkonen and A. Pärssinen, "A 28 GHz Static CML Frequency Divider with Back-Gate Tuning on 22-nm CMOS FD-SOI Technology," 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA, 2019, pp. 1-3. doi: 10.1109/SIRF.2019.8709088

A 28 GHz static CML frequency divider with back-gate tuning on 22-nm CMOS FD-SOI technology

Saved in:
Author: Hietanen, Mikko1; Aikio, Janne2; Akbar, Rehman1;
Organizations: 1Centre of Wireless Communications – Radio Technologies – P.O. Box 4500, FI-90014 University of Oulu, Finland
2Electronics Laboratory – Circuits and Systems – P.O. Box 4500, FI-90014 University of Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.6 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2019121748477
Language: English
Published: Institute of Electrical and Electronics Engineers, 2019
Publish Date: 2019-12-17
Description:

Abstract

A divide-by-2 frequency divider circuit was designed using 22-nm CMOS FD-SOI technology. The circuit utilizes back-gate biasing which provides almost 4GHz additional output center frequency tuning range over other mechanisms leading to 21.3 to 30GHz operation range with 0dBm input signal. This covers 5G bands from 24.25 to 27.5GHz with good margin. Divider dissipates 11mW from 0.86V supply and occupies 800μm² of area. Small area allows to place divider-by-2 block next to IQ mixers in a direct conversion or sliding IF transmitter or receiver.

see all
Series: IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
ISSN: 2475-2983
ISSN-E: 2474-9761
ISSN-L: 2474-9761
ISBN: 978-1-5386-5950-2
ISBN Print: 978-1-5386-5951-9
Pages: 328 - 330
DOI: 10.1109/SIRF.2019.8709088
OADOI: https://oadoi.org/10.1109/SIRF.2019.8709088
Host publication: 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Conference: Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
5G
CMOS SOI
divider
mmWave
Article
Funding: This research has been financially supported by Academy of Finland 6Genesis Flagship (grant 318927) and Nokia Corporation Ltd. Global Foudries is acknowledged for silicon fabrication and technical support.
Academy of Finland Grant Number: 318927
Detailed Information: 318927 (Academy of Finland Funding decision)
Copyright information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists,or reuse of any copyrighted component of this work in other works.