University of Oulu
Oulu University Library
OuluCRIS
Laturi
Muuntaja

Similar Items

Cover Image

L. W. Hallman et al., "High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Near p-cladding," in IEEE Photonics Technology Letters, vol. 31, no. 20, pp. 1635-1638, 15 Oct.15, 2019. doi: 10.1109/LPT.2019.2940231

High power 1.5 μm pulsed laser diode with asymmetric waveguide and active layer near p-cladding

Saved in:
Author: Hallman, Lauri W.1; Ryvkin, Boris S.1,2; Avrutin, Eugene A.3;
Organizations: 1Circuits and Systems Research Unit, University of Oulu, 90014, Finland
2A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
3Department of Electronic Engineering, University of York, York. YO10 5DD, U.K.
4Optoelectronics Research Centre, TUT, Tampere, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.3 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe202001071213
Language: English
Published: Institute of Electrical and Electronics Engineers, 2019
Publish Date: 2020-01-07
Description:

Abstract

We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 μm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 μm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.

see all
Series: IEEE photonics technology letters
ISSN: 1041-1135
ISSN-E: 1941-0174
ISSN-L: 1041-1135
Volume: 31
Issue: 20
Pages: 1635 - 1638
DOI: 10.1109/LPT.2019.2940231
OADOI: https://oadoi.org/10.1109/LPT.2019.2940231
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Laser radar
optical pulse generation
semiconductor lasers
Article
Funding: This work was supported by the Academy of Finland, Centre of Excellence in Laser Scanning Research under contracts 307362 and 317144, and in part by Business Finland under contract 4965/31/2018. Financial support from KAUTE Foundation is also gratefully acknowledged.
Academy of Finland Grant Number: 307362
317144
Detailed Information: 307362 (Academy of Finland Funding decision)
317144 (Academy of Finland Funding decision)
Copyright information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.