L. W. Hallman et al., "High Power $1.5\mu$ m Pulsed Laser Diode With Asymmetric Waveguide and Active Layer Near p-cladding," in IEEE Photonics Technology Letters, vol. 31, no. 20, pp. 1635-1638, 15 Oct.15, 2019. doi: 10.1109/LPT.2019.2940231
High power 1.5 μm pulsed laser diode with asymmetric waveguide and active layer near p-cladding
|Author:||Hallman, Lauri W.1; Ryvkin, Boris S.1,2; Avrutin, Eugene A.3;|
1Circuits and Systems Research Unit, University of Oulu, 90014, Finland
2A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
3Department of Electronic Engineering, University of York, York. YO10 5DD, U.K.
4Optoelectronics Research Centre, TUT, Tampere, Finland
|Online Access:||PDF Full Text (PDF, 0.3 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe202001071213
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2020-01-07
We report first experimental results on a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 μm) with an asymmetric waveguide structure. The laser has a bulk active layer positioned very close to the p-cladding in order to eliminate current-induced nonuniform carrier accumulation in the p-side of the waveguide and the associated carrier losses. Moderate doping of the n-side of the waveguide is used to strongly suppress nonuniform carrier accumulation within this part of the waveguide. Highly p-doped InP p-cladding facilitates low series resistance. An as-cleaved sample with a stripe width of 90 μm exhibits an output power of about 18 W at a pumping current amplitude of 80 A. Theoretical calculations, validated by comparison to experiment, suggest that the performance of lasers of this type can be improved further by optimization of the waveguide thickness and doping as well as improvement of injection efficiency.
IEEE photonics technology letters
|Pages:||1635 - 1638|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This work was supported by the Academy of Finland, Centre of Excellence in Laser Scanning Research under contracts 307362 and 317144, and in part by Business Finland under contract 4965/31/2018. Financial support from KAUTE Foundation is also gratefully acknowledged.
|Academy of Finland Grant Number:||
307362 (Academy of Finland Funding decision)
317144 (Academy of Finland Funding decision)
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