University of Oulu

L. Hallman et al., "Double-asymmetric-structure 1.5 μ m high power laser diodes," 2019 IEEE High Power Diode Lasers and Systems Conference (HPD), Coventry, United Kingdom, 2019, pp. 19-20, doi: 10.1109/HPD48113.2019.8938671

Double-asymmetric-structure 1.5 μ m high power laser diodes

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Author: Hallman, Lauri1; Ryvkin, Boris S.1,2; Avrutin, Eugene A.3;
Organizations: 1Circuits and Systems Research Unit, University of Oulu, 90014, Finland
2A. F. Ioffe Physico-Technical Institute, St. Petersburgs 194021, Russia
3Dept of Electronic Engineering, University of York YO10 4LE, UK
4Optoelectronics Research Center, TUT, Tampere, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.1 MB)
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Language: English
Published: Institute of Electrical and Electronics Engineers, 2019
Publish Date: 2020-06-25


Design considerations for high pulsed power and brightness 1.5 μm laser emitters for laser radar applications, based on comprehensive semi-analytical theory, are presented. A strongly asymmetric waveguide design with a bulk active layer positioned very near the p-emitter interface is chosen to minimize the current-induced losses at high power while maintaining a single, broad transverse mode. Moderate to high doping of the n-side of the Optical Confinement Layer and high p-doping of the p-cladding layer are used to reduce the residual current-induced losses and the electric resistance of the structure. For pulsed room-temperature operation, short laser resonators are found to be advantageous. First experimental results are presented. An as-cleaved sample with a stripe width of 90 μm and a resonator 2 mm long exhibits an output power of about 18 W at a pumping current amplitude of 80 A, with 1 mm long resonators showing higher power output. Further improvements are predicted by structure optimization as well as increase in internal quantum efficiency and thermal performance.

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Series: IEEE High Power Diode Lasers and Systems Conference
ISSN: 2379-0385
ISSN-E: 2379-0393
ISSN-L: 2379-0385
ISBN: 978-1-7281-3097-2
ISBN Print: 978-1-7281-3098-9
Pages: 19 - 20
Article number: 8938671
DOI: 10.1109/HPD48113.2019.8938671
Host publication: 2019 IEEE High Power Diode Lasers and Systems Conference (HPD)
Conference: IEEE High Power Diode Lasers and Systems Conference
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
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