Double-asymmetric-structure 1.5 μ m high power laser diodes |
|
Author: | Hallman, Lauri1; Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; |
Organizations: |
1Circuits and Systems Research Unit, University of Oulu, 90014, Finland 2A. F. Ioffe Physico-Technical Institute, St. Petersburgs 194021, Russia 3Dept of Electronic Engineering, University of York YO10 4LE, UK
4Optoelectronics Research Center, TUT, Tampere, Finland
|
Format: | article |
Version: | accepted version |
Access: | open |
Online Access: | PDF Full Text (PDF, 0.1 MB) |
Persistent link: | http://urn.fi/urn:nbn:fi-fe2020062545665 |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers,
2019
|
Publish Date: | 2020-06-25 |
Description: |
AbstractDesign considerations for high pulsed power and brightness 1.5 μm laser emitters for laser radar applications, based on comprehensive semi-analytical theory, are presented. A strongly asymmetric waveguide design with a bulk active layer positioned very near the p-emitter interface is chosen to minimize the current-induced losses at high power while maintaining a single, broad transverse mode. Moderate to high doping of the n-side of the Optical Confinement Layer and high p-doping of the p-cladding layer are used to reduce the residual current-induced losses and the electric resistance of the structure. For pulsed room-temperature operation, short laser resonators are found to be advantageous. First experimental results are presented. An as-cleaved sample with a stripe width of 90 μm and a resonator 2 mm long exhibits an output power of about 18 W at a pumping current amplitude of 80 A, with 1 mm long resonators showing higher power output. Further improvements are predicted by structure optimization as well as increase in internal quantum efficiency and thermal performance. see all
|
Series: |
IEEE High Power Diode Lasers and Systems Conference |
ISSN: | 2379-0385 |
ISSN-E: | 2379-0393 |
ISSN-L: | 2379-0385 |
ISBN: | 978-1-7281-3097-2 |
ISBN Print: | 978-1-7281-3098-9 |
Pages: | 19 - 20 |
Article number: | 8938671 |
DOI: | 10.1109/HPD48113.2019.8938671 |
OADOI: | https://oadoi.org/10.1109/HPD48113.2019.8938671 |
Host publication: |
2019 IEEE High Power Diode Lasers and Systems Conference (HPD) |
Conference: |
IEEE High Power Diode Lasers and Systems Conference |
Type of Publication: |
A4 Article in conference proceedings |
Field of Science: |
213 Electronic, automation and communications engineering, electronics |
Subjects: | |
Copyright information: |
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |