R. A. Shaheen, T. Rahkonen and A. Pärssinen, "mmWave Frequency Reconfigurable Low Noise Amplifiers for 5G," in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2020.3014571
mmWave frequency reconfigurable low noise amplifiers for 5G
|Author:||Shaheen, Rana A.1,2; Rahkonen, Timo3; Pärssinen, Aarno3|
1University of Oulu
2NXP Semiconductor, Caen, France
3University of Oulu, Oulu, Finland
|Online Access:||PDF Full Text (PDF, 3.8 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2020081760617
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2020-08-17
In this brief, designs of two millimeter wave (mmWave) reconfigurable multi band low noise amplifiers (LNA) are presented targeted for fifth generation (5G) communications. A reconfigurable tunable load based on electrical and magnetic tuning is proposed to cover three mmWave frequency bands for 5G, i.e. 24 GHz, 28 GHz and 39 GHz. Two LNA structures are designed and fabricated using 45nm CMOS SOI technology. The first toplogy (LNA1) is composed of a single input wideband matching circuit to cover frequency operations from 24 GHz to 40 GHz. On the other hand, second topology (LNA2) uses three separate narrowband match inputs, one for each frequency band, with combined output. Design methodology of passive and active devices is presented towards compact integration of LNAs for systems such as, phased arrays. Ground plane and its impact on the performance parameters is also discussed in this work. Measurement results show a wideband noise figure (NF) ranging from 3.8 dB to 4.9 dB and gain of 8.5 dB to 12.5 dB for LNA1 at different bands. Similarly, LNA2 exhibits NF of 4.5 dB to 5.5 dB and gain of 9.5 dB to 15.5 dB across all bands. Total area (including pads) of LNA1 and LNA2 are 0.316 mm2 and 0.695 mm2, respectively.
IEEE transactions on circuits and systems. II, Express briefs
|Pages:||1 - 5|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
The authors would like to thank Nokia Corporation for financial support and Global Foundries for support in process technology. Matti Polojarvi, Alok and Rehman are highly acknowledged for their support during design and Lab measurements. This research has been also in part financially supported by Academy of Finland 6Genesis Flagship (grant 318927).
|Academy of Finland Grant Number:||
318927 (Academy of Finland Funding decision)
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