University of Oulu

Kezilebieke, S., Huda, M.N., Dreher, P. et al. Electronic and magnetic characterization of epitaxial VSe₂ monolayers on superconducting NbSe₂. Commun Phys 3, 116 (2020).

Electronic and magnetic characterization of epitaxial VSe₂ monolayers on superconducting NbSe₂

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Author: Kezilebieke, Shawulienu1; Huda, Md Nurul1; Dreher, Paul2,3;
Organizations: 1Department of Applied Physics, Aalto University, FI-00076, Aalto, Finland
2Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, 20018, San Sebastián, Spain
3Centro de Física de Materiales (CSIC-UPV-EHU), Manuel Lardizábal 4, 20018, San Sebastián, Spain
4Ikerbasque, Basque Foundation for Science, 48013, Bilbao, Spain
5Microelectronics Research Unit, University of Oulu, 90014, Oulu, Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 1.5 MB)
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Language: English
Published: Springer Nature, 2020
Publish Date: 2020-09-10


There has been enormous recent interest in heterostructures of two-dimensional van der Waals materials. Integrating materials with different quantum ground states in vertical heterostructures is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe₂) with the monolayer vanadium diselenide (VSe₂). Molecular-beam epitaxy growth in ultra-high vacuum yields clean and atomically sharp interfaces. Combining different characterization techniques and density-functional theory calculations, we investigate the electronic and magnetic properties of VSe₂ on NbSe₂. Low temperature scanning tunneling microscopy measurements show an absence of the typical charge density wave on VSe₂ and demonstrate a reduction of the superconducting gap of NbSe₂ on the VSe₂ layer. This suggests magnetization of the VSe₂ sheet, at least on the local scale. Our work demonstrates superconducting-magnetic hybrid materials with potential applications in future electronics devices.

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Series: Communications physics
ISSN: 2399-3650
ISSN-E: 2399-3650
ISSN-L: 2399-3650
Volume: 3
Issue: 1
Article number: 116
DOI: 10.1038/s42005-020-0377-4
Type of Publication: A1 Journal article – refereed
Field of Science: 114 Physical sciences
221 Nanotechnology
Funding: This research made use of the Aalto Nanomicroscopy Center (Aalto NMC) facilities and was supported by the European Research Council (ERC-2017-AdG no. 788185 “Artificial Designer Materials”) and Academy of Finland (Academy professor funding no. 318995 and 320555, Academy postdoctoral researcher no. 309975, and Academy research fellow no. 311058). Our DFT calculations were performed using computer resources within the Aalto University School of Science “Science-IT” project and the Finnish CSC-IT Center for Science. M.M.U. acknowledges support by the Spanish MINECO under grant no. MAT2017-82074-ERC and by the ERC Starting grant LINKSPM (Grant 758558).
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