University of Oulu

Boris S Ryvkin et al 2020 Semicond. Sci. Technol. 35 085008

Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes

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Author: Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Kostamovaara, Juha T.1
Organizations: 1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland
2A F Ioffe Physico-Technical Institute, St.Petersburg, Russia
3Dept of Electronics, University of York, York, United Kingdom
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 0.8 MB)
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Language: English
Published: IOP Publishing, 2020
Publish Date: 2020-09-18


It is shown, by calculations calibrated against the authors’ recent experimental data, that an eye-safe wavelength range InGaAsP/InP high pulsed power laser design using a bulk active layer, which has a large refractive index step with respect to the optical confinement layer and is located close to the p-cladding, can provide substantial performance improvement compared to the best results achieved so far for this operating regime and wavelength. The dependence of the laser performance on the design parameters such as the thicknesses of the active layer and the waveguide, as well as the cavity length, are analysed. It is shown that the relatively thick bulk active layer in such InGaAsP/InP lasers allows the use of short cavity lengths (~1 mm or even shorter), for achieving high pulsed power while maintaining a low p-cladding series resistance (making for high efficiency) and a narrow far field (making for high brightness). A single-asymmetry structure with the asymmetric active layer location but symmetric optical confinement layer/cladding refractive index steps gives performance only marginally inferior to that of a double-asymmetric one including asymmetric refractive index steps.

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Series: Semiconductor science and technology
ISSN: 0268-1242
ISSN-E: 1361-6641
ISSN-L: 0268-1242
Volume: 35
Issue: 8
Article number: 085008
DOI: 10.1088/1361-6641/ab8fbe
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Funding: This work was supported by the Academy of Finland, Centre of Excellence in Laser Scanning Research under contract 317144.
Academy of Finland Grant Number: 317144
Detailed Information: 317144 (Academy of Finland Funding decision)
Copyright information: © 2020 The Author(s). Published by IOP Publishing Ltd Printed in the UK. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.