University of Oulu

Järvinen, T., Komsa, H.-P., & Kordas, K. (2020). Visible range photoresponse of vertically oriented on-chip MoS2 and WS2 thin films. AIP Advances, 10(6), 065114. https://doi.org/10.1063/5.0010220

Visible range photoresponse of vertically oriented on-chip MoS2 and WS2 thin films

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Author: Järvinen, Topias1; Komsa, Hannu-Pekka1; Kordas, Krisztian1
Organizations: 1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 4 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2020091869991
Language: English
Published: American Institute of Physics, 2020
Publish Date: 2020-09-18
Description:

Abstract

The excellent electrical properties of transition metal dichalcogenide (TMD) 2D materials promise a competitive alternative to traditional semiconductor materials for applications in optoelectronics, chemical sensing, as well as in energy harvesting and conversion. As the typical synthesis methods of TMDs produce nanoparticles, such as single or multi-layered nanoflakes, subsequent strenuous integration steps are necessary to obtain devices. Direct synthesis of the material on substrates would simplify the process and provide the means for large-scale integration and production of practical devices. In our approach, we synthesize MoS2 and WS2 thin films with a simple sulfurization of the respective metal films deposited by sputtering on Si/SiO2 chips, and study their optoelectrical properties at wavelengths of 661 nm, 552 nm, and 401 nm using pulsed lasers. Both TMD thin films are found to show photoresponsivities of up to ∼5 × 10−6 A W−1 with corresponding quantum efficiencies of ∼10−5, which are unexpectedly moderate, and can be attributed to their columnar microstructure, in which the basal planes of the hexagonal lattices are perpendicular to the substrate, thus, limiting the electron transport in the films parallel to the plane of the substrate.

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Series: AIP advances
ISSN: 2158-3226
ISSN-E: 2158-3226
ISSN-L: 2158-3226
Volume: 10
Issue: 6
Article number: 065114
DOI: 10.1063/5.0010220
OADOI: https://oadoi.org/10.1063/5.0010220
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: We also acknowledge the support received from the University of Oulu (project Entity).
Copyright information: © Author(s) 2020.