University of Oulu

Ducharne, B., Juuti, J. and Bai, Y. (2020), A Simulation Model for Narrow Band Gap Ferroelectric Materials. Adv. Theory Simul., 3: 2000052. doi:10.1002/adts.202000052

A simulation model for narrow band gap ferroelectric materials

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Author: Ducharne, Benjamin1; Juuti, Jari2; Bai, Yang2
Organizations: 1Laboratoire de Génie Electrique et Ferroélectricité, INSA Lyon, Villeurbanne, 69621 France
2Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, FI‐90014 Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 1.3 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2020100778273
Language: English
Published: John Wiley & Sons, 2020
Publish Date: 2020-10-07
Description:

Abstract

Various ferroelectric simulation models have been developed in recent decades in order to study the mechanisms and predict the behaviors of ferroelectrics by simulating their hysteresis loops. Conventional ferroelectrics have wide optical band gaps (>2.7 eV), making them difficult to respond to visible light. Although their ferroelectricity can be affected by higher‐energy radiation like ultraviolet, little attention is paid to the development of their models incorporating light‐dependent factors. However, in recent years, narrow band gap (<5 eV) ferroelectrics have been discovered and are increasingly researched. These special ferroelectrics effectively absorb visible light and hence exhibit strongly light‐dependent ferroelectricity, triggering potentially a broad range of applications. Therefore, there is a need to develop a model for these ferroelectrics in order to predict their behavior under visible light. Such a model is also needed to improve the understanding of the interaction mechanisms between light and domains. In this paper, a ferroelectric simulation model based on the Jiles–Atherton theory considering light dependence is developed for the first time, and its accuracy is validated by experiments. The model shows an average error of 7.5% on polarization values compared to experimental results and thus can be employed to reliably predict photo‐induced ferroelectricity.

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Series: Advanced theory and simulations
ISSN: 2513-0390
ISSN-E: 2513-0390
ISSN-L: 2513-0390
Volume: 3
Issue: 9
Article number: 2000052
DOI: 10.1002/adts.202000052
OADOI: https://oadoi.org/10.1002/adts.202000052
Type of Publication: A1 Journal article – refereed
Field of Science: 216 Materials engineering
213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: Y.B. would like to acknowledge the joint funding by University of Oulu and Academy of Finland profiling action “‘Ubiquitous wireless sensor systems”’ (grant number 24302332).
Academy of Finland Grant Number: 24302332
Detailed Information: 24302332 (Academy of Finland Funding decision)
Copyright information: © 2020 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
  https://creativecommons.org/licenses/by/4.0/