ACS Appl. Electron. Mater. 2020, 2, 9, 2829–2836
Current modulation by optoelectric control of ferroelectric domains
|Author:||Vats, Gaurav1; Peräntie, Jani2; Palosaari, Jaakko2;|
1School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
2Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014 Oulu, Finland
|Online Access:||PDF Full Text (PDF, 6 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2020101584137
American Chemical Society,
|Publish Date:|| 2020-10-15
Optoelectric control of domains is likely to pave the foundation for optoferroelectric devices. This work reports the combined effect of light and low-voltage electric bias for optoelectric control of ferroelectric domains in a semiconducting ceramic material—KNBNNO ((K0.5Na0.5)NbO3 doped with 2 mol % Ba(Ni0.5Nb0.5)O3−δ). The effect is utilized to achieve two orders of magnitude amplification in electrical response, asymmetric AC modulation, and domain velocities of 30 000 nm s–1 with ultralarge domain switching areas of over 30 μm in fractions of a second. The charge injection due to light illumination on this material causes the tuning of material conductivity and acts as a virtual electrode. Based on this mechanism, a proof of concept for a monolithic ferroelectric light-effect transistor with a source and drain as electrical contacts with light acting as a virtual gate is demonstrated. This is likely to offer a potential solution to the scaling limit of conventional three-terminal transistors. The same device is also demonstrated to work as a photodiode, a half-wave rectifier, and an electrical output modulator.
ACS applied electronic materials
|Pages:||2829 - 2836|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
216 Materials engineering
Research Council (ARC) through Discovery Grants. G.V. acknowledges the financial support from Tiina and Antti Herlin Foundation, Finland. J.P. acknowledges the funding by the Academy of Finland (grant number 298409). Y.B. would like to acknowledge the joint funding by the University of Oulu and Academy of Finland profiling action “Ubiquitous wireless sensor systems” (grant number 24302332). The authors also acknowledge the Centre for Material Analysis of the University of Oulu for the use of their facilities and for the fabrication of the electrodes. G.V. carried out the nanoscale and macroscopic characterizations. J.P. performed a part of the macroscopic measurements. J.P. helped to fabricate the samples. Y.B. fabricated the samples and carried out the macroscopic characterizations. All authors co-wrote the paper.
|Academy of Finland Grant Number:||
298409 (Academy of Finland Funding decision)
© The Authors 2020. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.