University of Oulu

B. S. Ryvkin, E. A. Avrutin, L. W. Hallman and J. T. Kostamovaara, "High Power $1.5\ \mu \mathrm{m}$ Pulsed Semiconductor Laser Design with a Bulk Active Layer and an Asymmetric Waveguide," 2020 22nd International Conference on Transparent Optical Networks (ICTON), Bari, Italy, 2020, pp. 1-4, doi: 10.1109/ICTON51198.2020.9203550

High Power 1.5 μm pulsed semiconductor laser design with a bulk active layer and an asymmetric waveguide

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Author: Ryvkin, Boris S.1,2; Avrutin, Eugene A.3; Hallman, Lauri W.1;
Organizations: 1Dept of Electrical and Information Engineering, University of Oulu, Oulu, Finland
2A. F. Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
3Dept of Electronic Engineering, University of York, York, UK
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.3 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2020111890942
Language: English
Published: Institute of Electrical and Electronics Engineers, 2020
Publish Date: 2020-11-18
Description:

Abstract

InGaAsP/InP high pulsed power lasers operating in the range of 1.3–1.6 μm have been intensely studied recently, with LIDAR technology being the primary application. We present and analyse a design with a bulk active layer which has a large refractive index step with respect to the optical confinement layer and is located close to the p-cladding. It is shown that such lasers can allow a noticeable performance increase over the state of the art. The dependence of the laser performance on the design parameters including the thicknesses of the active layer and the waveguide, the cavity length, and the waveguide asymmetry, is analysed. It is shown that short cavity lengths (~1 mm or even shorter) can be used in the design considered for achieving high pulsed power. Due to the significant waveguiding properties of the active layer, the use of both symmetric and asymmetric waveguide designs is possible, with only slightly higher output predicted for the asymmetric one. Both designs allow operation with a single, broad transverse mode enabling high brightness.

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Series: Conference proceedings : International Conference on Transparent Optical Networks
ISSN: 2161-2056
ISSN-E: 2161-2064
ISSN-L: 2161-2056
ISBN: 978-1-7281-8423-4
ISBN Print: 978-1-7281-8424-1
Pages: 1 - 4
DOI: 10.1109/ICTON51198.2020.9203550
OADOI: https://oadoi.org/10.1109/ICTON51198.2020.9203550
Host publication: 22nd International Conference on Transparent Optical Networks, ICTON 2020, 19-23 July 2020, Bari, Italy
Host publication editor: Jaworski, Marek
Marciniak, Marian
Conference: International Conference on Transparent Optical Networks
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: This work was partly funded by the Academy of Finland under grant 317144.
Academy of Finland Grant Number: 317144
Detailed Information: 317144 (Academy of Finland Funding decision)
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