University of Oulu

Assa Aravindh, S., Xin, B., Mitra, S., Roqan, I. S., & Najar, A. (2020). GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies. Results in Physics, 19, 103428.

GaN and InGaN nanowires prepared by metal-assisted electroless etching : experimental and theoretical studies

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Author: Assa Aravindh, S.1,2; Xin, Bin1; Mitra, Somak1;
Organizations: 1King Abdullah University of Science and Technology, Physical Science and Engineering (PSE) Division, Thuwal 23955-6900, Saudi Arabia
2Nano and Molecular Systems Research Unit, University of Oulu, P.O. Box 8000, FI-90014 Oulu, Finland
3Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, United Arab Emirates
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 3.1 MB)
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Language: English
Published: Elsevier, 2020
Publish Date: 2020-11-19


We investigate the optical and structural properties of GaN and InGaN nanowires (NWs) fabricated by metal-assisted electroless etching in a hydrofluoric acid (HF) solution. The emission spectra of GaN and InGaN NWs exhibit a red shift compared to the as-grown samples resulting from an increase in the surface-to-volume ratio and stress relaxation in these nanostructures. The carrier lifetimes of GaN and InGaN NWs were measured. In addition, density functional theory (DFT) investigations were carried out on GaN and InGaN NWs using the generalized gradient approximation (GGA), including the Hubbard U parameter. The presence of compressive stress in the NWs was confirmed by the DFT calculations, which indicated that it induces a change in the lattice parameter along the c-direction. Formation energy calculations showed that In is a much more stable dopant in the GaN NWs compared to the native point defects, such as Ga and N vacancies. Moreover, electronic structure analysis revealed that the complex defects formed by the presence of In along with vacancy defects shifts the valence band maximum, thus changing the conducting properties of the NWs.

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Series: Results in physics
ISSN: 2211-3797
ISSN-E: 2211-3797
ISSN-L: 2211-3797
Volume: 19
Article number: 103428
DOI: 10.1016/j.rinp.2020.103428
Type of Publication: A1 Journal article – refereed
Field of Science: 216 Materials engineering
114 Physical sciences
221 Nanotechnology
Funding: This work was supported by UAE University under UPAR grant 31S306.
Copyright information: © 2020 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (