Hietanen, M., Rusanen, J., Aikio, J.P., Tervo, N., Rahkonen, T., Pärssinen, A., Ka-band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology, Proceedings of the 50th European Microwave Conference, ISBN: 978-287487-059-0, p. 945-948
Ka-band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology
|Author:||Hietanen, Mikko1; Rusanen, Jere1; Aikio, Janne P.1;|
1University of Oulu, Finland
|Online Access:||PDF Full Text (PDF, 1.2 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe202101222344
European Microwave Association,
|Publish Date:|| 2021-01-22
TDD Ka-band front-end with integrated switch on 22nm FDSOI CMOS technology is implemented for 5G NR at 24–28 GHz bands. Shunt switch technique reduces front-end performance only by 2 dB at 24 GHz compared to stand-alone reference amplifiers. Output power of TX with stacked PA is 13.6 dBm with 15 dB of peak gain, and RX front-end has 5dB noise figure at 24 GHz, both measured at the antenna port. Maximum average channel power at 28 GHz was 4.8 dBm with 100 MHz 64-QAM OFDM signal within 5G ACPR and EVM specifications. The PA and LNA amplifiers dissipate 183 mW and 4.6 mW from 2.8V and 0.8V supplies, respectively, occupying only 0.19mm2.
|Pages:||945 - 948|
Proceedings of the 50th European Microwave Conference
European MIcrowave Conference
|Type of Publication:||
A4 Article in conference proceedings
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This research has been financially supported by Academy of Finland 6Genesis Flagship (grant 318927) and Nokia Corporation Ltd. GLOBAL FOUNDRIES is acknowledged for silicon fabrication and technical support.
|Academy of Finland Grant Number:||
318927 (Academy of Finland Funding decision)
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