I. A. Prudaev, S. N. Vainshtein, M. G. Verkholetov, V. L. Oleinik and V. V. Kopyev, "Avalanche Delay and Dynamic Triggering in GaAs-Based S-Diodes Doped With Deep Level Impurity," in IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 57-65, Jan. 2021, doi: 10.1109/TED.2020.3039213
Avalanche delay and dynamic triggering in GaAs-based S-diodes doped with deep level impurity
|Author:||Prudaev, Ilya A.1,2; Vainshtein, Sergey N.3,4; Verkholetov, Maksim G.1;|
1Department of Semiconductor Electronics, Tomsk State University, 634050 Tomsk, Russia
2Avalanche Electronics LLC, 634034 Tomsk, Russia
3University of Oulu, FI-90014 Oulu, Finland
4Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
|Online Access:||PDF Full Text (PDF, 2.5 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe202103056641
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2021-03-05
The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are simulated in a simplified generator. The dynamic electric field and charge profiles in the structures are calculated. This article describes an impact that Fe capture cross sections of free charge carriers have on delayed switching. The simulation results show that delayed switching is associated with deep center recharging in a double injection mode due to three different processes. There are two different delay mechanisms to be herewith distinguished. A delay effect is experimentally viewed to control the dynamic switching voltage (and the avalanche breakdown voltage) using constant voltage adjustment capability enabled by a triggering circuit supply. The authors demonstrate the way it is possible to adjust the amplitude of current nanosecond pulses in the range of 20—45 A through a lidar transmitter circuit with a semiconductor laser and nonoptimized S-diode. The findings are consistent with the results of numerical simulation.
IEEE transactions on electron devices
|Pages:||57 - 65|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This work was supported by the Russian Foundation for Basic Research (RFBR), under Project 20-08-00141.
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