University of Oulu

Tyunina, M., Rusevich, L. L., Kotomin, E. A., Pacherova, O., Kocourek, T., & Dejneka, A. (2021). Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies. Journal of Materials Chemistry C, 9(5), 1693–1700.

Epitaxial growth of perovskite oxide films facilitated by oxygen vacancies

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Author: Tyunina, M.1,2; Rusevich, L. L.3; Kotomin, E. A.3,4;
Organizations: 1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P. O. Box 4500, FI-90014 Oulu, Finland
2Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republ
3Institute of Solid State Physics, University of Latvia, Kengaraga Str. 8, LV-1063 Riga, Latvia
4Max Planck Institute for Solid State Research, Heisenberg Str. 1, Stuttgart D-70569, Germany
5Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 2.6 MB)
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Language: English
Published: Royal Society of Chemistry, 2021
Publish Date: 2021-04-19


Single-crystal epitaxial films of technologically important and scientifically intriguing multifunctional ABO3 perovskite-type metal oxides are essential for advanced applications and understanding of these materials. In such films, a film-substrate misfit strain enables unprecedented crystal phases and unique properties that are not available in their bulk counterparts. However, the prerequisite growth of strained epitaxial films is fundamentally restricted by misfit relaxation. Here we demonstrate that introduction of a small oxygen deficiency concurrently stabilizes epitaxy and increases lattice strain in thin films of archetypal perovskite oxide SrTiO3. By combining experimental and theoretical methods, we found that lattice distortions around oxygen vacancies lead to anisotropic local stresses, which interact with the misfit strain in epitaxial films. Consequently, specific crystallographic alignments of the stresses are energetically favorable and can facilitate epitaxial growth of strained films. Because anisotropic oxygen-vacancy stresses are inherent to perovskite-type and many other oxides, we anticipate that the disclosed phenomenon of epitaxial stabilization by oxygen vacancies is relevant for a very broad range of functional oxides.

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Series: Journal of materials chemistry. C, Materials with applications in optical, magnetic & electronic devices
ISSN: 2050-7526
ISSN-E: 2050-7534
ISSN-L: 2050-7526
Volume: 9
Issue: 5
Pages: 1693 - 1700
DOI: 10.1039/d0tc05750a
Type of Publication: A1 Journal article – refereed
Field of Science: 116 Chemical sciences
216 Materials engineering
Funding: The authors acknowledge support from the Czech Science Foundation (Grant No. 19-09671S), the European Structural and Investment Funds and the Ministry of Education, Youth and Sports of the Czech Republic through Programme ‘‘Research, Development and Education’’ (Project No. SOLID21 CZ.02.1.01/0.0/0.0/16-019/0000760), and ERA NET project Sun2Chem (E. K. and L. R.). Calculations have been done on the LASC Cluster in the ISSP UL.
Copyright information: © The Royal Society of Chemistry 2021.This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.