University of Oulu

J. Rusanen, N. Tervo, T. Rahkonen, A. Pärssinen and J. P. Aikio, "Ka-Band Dual Input Stacked 22 nm CMOS FDSOI Power Amplifier with Transformer-Based Power Combiner," 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 2021, pp. 145-148

Ka-band dual input stacked 22 nm CMOS FDSOI power amplifier with transformer-based power combiner

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Author: Rusanen, Jere1; Tervo, Nuutti1; Rahkonen, Timo1;
Organizations: 1Department of Information Technology and Electrical Engineering, University of Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.5 MB)
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Language: English
Published: Institute of Electrical and Electronics Engineers, 2021
Publish Date: 2021-05-03


A Ka-band dual input, three stack power amplifier (PA) is designed and fabricated using 22nm CMOS FDSOI. The PA output matching is implemented with a transformer-based combiner, which allows tuning the load with bias and input drive settings. The PA shows maximum output power, gain, one dB output power compression point (P 1dB ) and power added efficiency (PAE) of 19.5dBm, 11.5dB, 14.1dBm and 17%, respectively, measured at 29.5 GHz. Measured amplitude to phase modulation (AM-PM) stays at very low level, below 0.7° up to P 1dB and below 2.6° up to P 3dB . With a 100 MHz 64-QAM OFDM signal the PA achieves 8% error vector magnitude (EVM) and -28dBc adjacent channel leakage ratio (ACLR) at 6.3dBm and 7.6dBm output channel power, respectively.

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ISBN: 978-2-87487-060-6
ISBN Print: 978-1-7281-7040-4
Pages: 145 - 148
Article number: 9337420
Host publication: 15th European Microwave Integrated Circuits Conference, EuMIC 2020
Conference: European Microwave Integrated Circuits Conference
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Funding: This research has been financially supported by Infotech Oulu and Academy of Finland research projects MIMEPA (grant 323779) and 6Genesis Flagship (grant 318927). GLOBALFOUNDRIES is acknowledged for silicon processing and technical support. Author Jere Rusanen would like to thank Tauno T¨onning Research Foundation and Foundation of Riitta and Jorma J. Takanen for personal grants.
Academy of Finland Grant Number: 323779
Detailed Information: 323779 (Academy of Finland Funding decision)
318927 (Academy of Finland Funding decision)
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