Ka-Band 4-stack 45nm CMOS SOI power amplifier supporting 3GPP new radio FR2 band n258
Aikio, Janne P.; Sethi, Alok; Hietanen, Mikko; Rahkonen, Timo; Pärssinen, Aarno (2021-03-26)
J. P. Aikio, A. Sethi, M. Hietanen, T. Rahkonen and A. Pärssinen, "Ka-Band 4-Stack 45nm CMOS SOI Power Amplifier Supporting 3GPP New Radio FR2 band n258," 2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), 2019, pp. 1-3, doi: 10.1109/IMOC43827.2019.9317652
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https://urn.fi/URN:NBN:fi-fe2021051129509
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Abstract
This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The operation frequency is from 20GHz to 30GHz, with a maximum gain of 13.7 dB. Maximum RF output power, power-added eficiency and output 1dB compression point are 20.5 dBm, 29% and 18dBm, respectively, achieved at 24GHz. EVM of 12.5% was measured at average channel power of 14.5 dBm using 100MHz 16-QAM 3GPP/NR OFDM signal at 26GHz.
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