University of Oulu

J. P. Aikio, A. Sethi, M. Hietanen, T. Rahkonen and A. Pärssinen, "Ka-Band 4-Stack 45nm CMOS SOI Power Amplifier Supporting 3GPP New Radio FR2 band n258," 2019 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), 2019, pp. 1-3, doi: 10.1109/IMOC43827.2019.9317652

Ka-Band 4-stack 45nm CMOS SOI power amplifier supporting 3GPP new radio FR2 band n258

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Author: Aikio, Janne P.1; Sethi, Alok1; Hietanen, Mikko1;
Organizations: 1Faculty of Information Technology and Electrical Engineering, University of Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 0.2 MB)
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Language: English
Published: Institute of Electrical and Electronics Engineers, 2021
Publish Date: 2021-05-11


This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The operation frequency is from 20GHz to 30GHz, with a maximum gain of 13.7 dB. Maximum RF output power, power-added eficiency and output 1dB compression point are 20.5 dBm, 29% and 18dBm, respectively, achieved at 24GHz. EVM of 12.5% was measured at average channel power of 14.5 dBm using 100MHz 16-QAM 3GPP/NR OFDM signal at 26GHz.

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ISBN: 978-1-7281-3099-6
ISBN Print: 978-1-7281-3100-9
Pages: 1 - 3
DOI: 10.1109/IMOC43827.2019.9317652
Host publication: 18th SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC), November 10-14, 2019, Aveiro, Portugal
Conference: SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
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