S. P. Singh, T. Rahkonen, M. E. Leinonen and A. Pärssinen, "A 290 GHz Low Noise Amplifier Operating above $f_{max}/2$ in 130 nm SiGe Technology for Sub-THz/THz Receivers," 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2021, pp. 223-226, doi: 10.1109/RFIC51843.2021.9490435

### A 290 GHz low noise amplifier operating above fmax in 130 nm SiGe technology for sub-THz/THz receivers

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Author: Singh, Sumit Pratap1; Rahkonen, Timo2; Leinonen, Marko E.1;
Organizations: 1Centre for Wireless Communication (CWC), Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, Finland
2Circuits and Systems (CAS) Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 1 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2021081843552
Language: English
Published: Institute of Electrical and Electronics Engineers, 2021
Publish Date: 2021-08-18
Description:

# Abstract

This paper presents the design of a low noise amplifier (LNA) operating at center frequency 290 GHz in 130 nm SiGe BiCMOS technology with ft/fmax of 300 GHz/450 GHz. The LNA consists of four stages of pseudo-differential cascode topology. Each stage is tuned and matched at different resonant frequency to obtain broadband frequency response around center frequency. This LNA provides 12.9 dB of gain at center frequency 290 GHz and 11.2 dB at 300 GHz. The 3-dB bandwidth is measured to be 23 GHz and simulated noise figure is 16 dB. The LNA draws 68 mA current from 2V supply. It shows the potential of silicon technologies to operate as high as 2/3(fmax) with decent gain and linearity at 300 GHz range. To the authors’ knowledge, this LNA achieves, without any gain-boosting technique, the highest gain at 2/3(fmax) in SiGe technology.

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Series: IEEE Radio Frequency Integrated Circuits Symposium digest of papers
ISSN: 1529-2517
ISSN-E: 2375-0995
ISSN-L: 1529-2517
ISBN: 978-1-6654-3082-1
ISBN Print: 978-1-6654-2549-0
Pages: 223 - 226
DOI: 10.1109/RFIC51843.2021.9490435
OADOI: https://oadoi.org/10.1109/RFIC51843.2021.9490435
Host publication: Proceedings of the 2021 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Conference: IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Type of Publication: A4 Article in conference proceedings
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: This research work has been financially supported by the Academy of Finland 6Genesis Flagship (grant 318927). The authors would like to thank to Keysight Technologies for measurement equipment donation. The authors would like to thank Klaus Nevala for his help during measurements.
Academy of Finland Grant Number: 318927
Detailed Information: 318927 (Academy of Finland Funding decision)
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