University of Oulu

Avrutin, E.A., Ryvkin, B.S., Kostamovaara, J.T.: AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission. IET Opotelectron. 15( 4), 194– 199 (2021). https://doi.org/10.1049/ote2.12033

AlGaAs/GaAs asymmetric-waveguide, short cavity laser diode design with a bulk active layer near the p-cladding for high pulsed power emission

Saved in:
Author: Avrutin, Eugene A.1; Ryvkin, Boris S.2,3; Kostamovaara, Juha T.2
Organizations: 1Department of Electronics, University of York, York, UK
2Department of Electrical and Information Engineering, University of Oulu, Oulu, Finland
3A F Ioffe Physico‐Technical Institute, St. Petersburg, Russia
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 0.9 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2021090745285
Language: English
Published: John Wiley & Sons, 2021
Publish Date: 2021-09-07
Description:

Abstract

It is shown theoretically that a GaAs/AlGaAs laser diode design using an asymmetric waveguide structure and a bulk active layer (AL), located close to the p-cladding, can provide high output power in a single, broad transverse mode for short-wavelength (<0.9 μm, matching the spectral range of high efficiency of silicon photodetectors) pulsed emission in the nanosecond pulse duration region, typically <<100 ns. The dependences of the laser performance on the thickness of the AL and the cavity length are analysed. It is shown that the relatively thick bulk AL allows the of short cavity lengths (<1 mm), for achieving high pulsed power while maintaining a relatively low series resistance and a narrow far field.

see all

Series: IET optoelectronics
ISSN: 1751-8768
ISSN-E: 1751-8776
ISSN-L: 1751-8768
Volume: 15
Issue: 4
Pages: 194 - 199
DOI: 10.1049/ote2.12033
OADOI: https://oadoi.org/10.1049/ote2.12033
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: Academy of Finland, Grant/Award Number: 317144.
Academy of Finland Grant Number: 317144
Detailed Information: 317144 (Academy of Finland Funding decision)
Copyright information: © 2021 The Authors. IET Optoelectronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
  https://creativecommons.org/licenses/by/4.0/