Anisotropic chemical expansion due to oxygen vacancies in perovskite films
|Author:||Tyunina, M.1,2; Pacherova, O.2; Kocourek, T.2;|
1Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P. O. Box 4500, 90014, Oulu, Finland
2Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic
|Online Access:||PDF Full Text (PDF, 1.4 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2021101250732
|Publish Date:|| 2021-10-12
In scientifically intriguing and technologically important multifunctional ABO3 perovskite oxides, oxygen vacancies are most common defects. They cause lattice expansion and can alter the key functional properties. Here, it is demonstrated that contrary to weak isotropic expansion in bulk samples, oxygen vacancies produce strong anisotropic strain in epitaxial thin films. This anisotropic chemical strain is explained by preferential orientation of elastic dipoles of the vacancies. Elastic interaction of the dipoles with substrate-imposed misfit strain is suggested to define the dipolar orientation. Such elastic behavior of oxygen vacancies is anticipated to be general for perovskite films and have critical impacts on the film synthesis and response functions.
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
216 Materials engineering
The authors acknowledge support from the Czech Science Foundation (Grant No. 19-09671S) and the European Structural and Investment Funds and the Ministry of Education, Youth and Sports of the Czech Republic through Programme “Research, Development and Education” (Project No. SOLID21 CZ.02.1.01/0.0/0.0/16-019/0000760).
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