University of Oulu

Yudin, P., Duchon, J., Pacherova, O., Klementova, M., Kocourek, T., Dejneka, A., & Tyunina, M. (2021) Ferroelectric phase transitions induced by a strain gradient. Physical Review Research 3(3), 033213,

Ferroelectric phase transitions induced by a strain gradient

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Author: Yudin, P.1,2; Duchon, J.1; Pacherova, O.1;
Organizations: 1Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Praha 8, Czech Republic
2Kutateladze Institute of Thermophysics, Siberian Branch of Russian Academy of Science, Lavrent’eva Ave. 1, Novosibirsk 630090, Russia
3Microelectronics Research Unit, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 2.4 MB)
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Language: English
Published: American Physical Society, 2021
Publish Date: 2021-12-16


In perovskite oxide ferroelectrics, gradients of lattice strain are known to induce nanoscale topological structures, leading to novel or enhanced functionality. Here, we experimentally detect and theoretically analyze thickness distribution of structural properties in epitaxial Pb0.5 Sr0.5 TiO3 films grown on (001) SrTiO3 substrates. We show that the relaxation of substrate-imposed stress produces a strain gradient, which leads to the formation of distinct ferroelectric phases as a function of distance from the film-substrate interface within the same film. Charge carriers trapped at phase boundaries stabilize the induced phases and manifest themselves under electric field. Crosstalk between the phases, where polarization may rotate in one phase and invert in the other one, opens perspectives for advanced ferroelectric thin film devices.

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Series: Physical review research
ISSN: 2643-1564
ISSN-E: 2643-1564
ISSN-L: 2643-1564
Volume: 3
Issue: 3
Article number: 033213
DOI: 10.1103/PhysRevResearch.3.033213
Type of Publication: A1 Journal article – refereed
Field of Science: 114 Physical sciences
216 Materials engineering
213 Electronic, automation and communications engineering, electronics
Funding: This paper was supported in part by the Operational Program Research, Development and Education, financed by the European Structural and Investment Funds and the Czech Ministry of Education, Youth, and Sports (Project No. SOLID21, CZ.02.1.01/0.0/0.0/16_019/0000760), and the Czech Science Foundation (Grants No. 19-09671S and No. 21-09685S). We acknowledge CzechNanoLab Research Infrastructure supported by MEYS CR (LM2018110). P.Y. acknowledges the Russian Foundation for Basic Research, Grant No. 19-02-00938, simulation of hysteresis loops was carried out under state contract with IT SB RAS (121031200084-2).
Copyright information: Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.