I. A. Prudaev, S. N. Vainshtein, V. V. Kopyev, V. L. Oleinik and S. N. Marochkin, "Suppression of Dynamic Current Leakage in Avalanche S-Diode Switching Circuits," in IEEE Electron Device Letters, vol. 43, no. 1, pp. 100-103, Jan. 2022, doi: 10.1109/LED.2021.3130596
Suppression of dynamic current leakage in avalanche S-diode switching circuits
|Author:||Prudaev, Ilya A.1,2; Vainshtein, Sergey N.3,4; Kopyev, Viktor V.5;|
1Department of Semiconductor Electronics, Tomsk State University, 634050 Tomsk, Russia
2Avalanche Electronics LLC, 634512 Tomsk, Russia
3MilliLab, Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland
4Faculty of Information Technology and Electrical Engineering, CAS Research Units, University of Oulu, 90014 Oulu, Finland
5Laboratory of Nonequilibrium Effects in Semiconductor Electronics, Research and Development Center “AET,” Tomsk State University, 634050 Tomsk, Russia
|Online Access:||PDF Full Text (PDF, 0.3 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2022083056767
Institute of Electrical and Electronics Engineers,
|Publish Date:|| 2022-08-30
This work investigates the dynamic current leakage of \(S\)-diode, which is a GaAs-based avalanche switch doped with deep Fe acceptor traps. The dynamic leakage has negative effect on superfast switching parameters of this unique device, and here we suggest an original way of reducing the leakage by means of circuit design. It is shown that an additional bias for avalanche S-diode in the current pulse generation circuit forms a negatively charged layer of iron traps near the electron-injecting junction. As a result, the concentration of nonequilibrium electrons goes down, which leads to a decrease in leakage current by ∼3–4 times, and a rise in S-diode switching voltage. The results were obtained in the experimental study and are approved by calculation.
IEEE electron device letters
|Pages:||100 - 103|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This work was supported by the Russian Foundation for Basic Research (RFBR) under Project 20-08-00141.
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