University of Oulu

Polivtseva, S., Kois, J., Kruzhilina, T., Kaupmees, R., Klopov, M., Molaiyan, P., van Gog, H., van Huis, M. A., & Volobujeva, O. (2022). Solution-Mediated Inversion of SnSe to Sb2Se3 Thin-Films. Nanomaterials, 12(17), 2898.

Solution-mediated inversion of SnSe to Sb₂Se₃ thin-films

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Author: Polivtseva, Svetlana1; Kois, Julia2; Kruzhilina, Tatiana1;
Organizations: 1Department of Materials and Environmental Technology, School of Engineering, TalTech, Ehitajate tee 5, 19086 Tallinn, Estonia
2Auramet Solutions OÜ, Kalliomäentie 1B, 02920 Espoo, Finland
3Department of Cybernetics, School of Science, TalTech, Ehitajate tee 5, 19086 Tallinn, Estonia
4Research Unit of Sustainable Chemistry, Faculty of Technology, University of Oulu, Pentti Kaiteran katu 1, 90014 Oulu, Finland
5Nanostructured Materials and Interfaces, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
6Soft Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands
Format: article
Version: published version
Access: open
Online Access: PDF Full Text (PDF, 6.7 MB)
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Language: English
Published: Multidisciplinary Digital Publishing Institute, 2022
Publish Date: 2022-08-31


New facile and controllable approaches to fabricating metal chalcogenide thin films with adjustable properties can significantly expand the scope of these materials in numerous optoelectronic and photovoltaic devices. Most traditional and especially wet-chemical synthetic pathways suffer from a sluggish ability to regulate the composition and have difficulty achieving the high-quality structural properties of the sought-after metal chalcogenides, especially at large 2D length scales. In this effort, and for the first time, we illustrated the fast and complete inversion of continuous SnSe thin-films to Sb₂Se₃ using a scalable top-down ion-exchange approach. Processing in dense solution systems yielded the formation of Sb₂Se₃ films with favorable structural characteristics, while oxide phases, which are typically present in most Sb₂Se₃ films regardless of the synthetic protocols used, were eliminated. Density functional theory (DFT) calculations performed on intermediate phases show strong relaxations of the atomic lattice due to the presence of substitutional and vacancy defects, which likely enhances the mobility of cationic species during cation exchange. Our concept can be applied to customize the properties of other metal chalcogenides or manufacture layered structures.

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Series: Nanomaterials
ISSN: 2079-4991
ISSN-E: 2079-4991
ISSN-L: 2079-4991
Volume: 12
Issue: 17
Article number: 2898
DOI: 10.3390/nano12172898
Type of Publication: A1 Journal article – refereed
Field of Science: 116 Chemical sciences
216 Materials engineering
Funding: The experimental work was performed at TalTech, funded by the Estonian Research Council through grant no. MOBTP1005 and grant no. PRG1023, and by European Union through the European Regional Development Fund (grant no. TK141).
Copyright information: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (