University of Oulu

M. S. Masyukov, S. N. Vainshtein, J. Mallat and Z. Taylor, "Contactless Terahertz Sensing of Ultrafast Switching in Marx Generator Based on Avalanche Transistors," in IEEE Electron Device Letters, vol. 43, no. 10, pp. 1724-1727, Oct. 2022, doi: 10.1109/LED.2022.3199996

Contactless terahertz sensing of ultrafast switching in Marx generator based on avalanche transistors

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Author: Masyukov, Maxim S.1; Vainshtein, Sergey N.1,2; Mallat, Juha1;
Organizations: 1MilliLab, Department of Electronics and Nanoengineering, Aalto Univer- sity, 00076 Aalto, Finland
2CAS Group, Faculty of Information Technology and Electrical Engineering, University of Oulu, 90014 Oulu, Finland
Format: article
Version: accepted version
Access: open
Online Access: PDF Full Text (PDF, 1.3 MB)
Persistent link: http://urn.fi/urn:nbn:fi-fe2022100661284
Language: English
Published: Institute of Electrical and Electronics Engineers, 2022
Publish Date: 2022-10-06
Description:

Abstract

In this letter, we have studied the temporal evolution of switching for each stage of the Marx generator with picosecond temporal and millimeter spatial resolutions employing terahertz measurements. The Marx circuit utilizes collapsing-field-domain (CFD)-based avalanche switches, which are formed in a bipolar GaAs structure and result in the picosecond speed of powerful carrier generation and electrical switching. The application of the CFD-based avalanche switches emitting mm-wave pulsed radiation in the Marx generator provides a unique opportunity to accurately track the switching instants for each of the circuit stages with a picosecond time precision. The collapsing domains cause the sub-THz pulses radiated by each of the avalanche switches, and the same domains generate the electron-hole plasma thus causing simultaneously the electrical switching. In this work, we report the direct measurements of the switching instants for each of the four stages Marx generator and suggest an interpretation of non-trivial experimental results.

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Series: IEEE electron device letters
ISSN: 0741-3106
ISSN-E: 1558-0563
ISSN-L: 0741-3106
Volume: 43
Issue: 10
Pages: 1724 - 1727
DOI: 10.1109/led.2022.3199996
OADOI: https://oadoi.org/10.1109/led.2022.3199996
Type of Publication: A1 Journal article – refereed
Field of Science: 213 Electronic, automation and communications engineering, electronics
Subjects:
Funding: This work was supported in part by the Jane and Aatos Erkko Foundation.
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