Abstract

Photosensors, photodetectors, or color sensors are key components for various optical and optoelectronic applications. Semiconductor-based photodetection has been a dominator which is excellent at measuring the photon intensity of incident light. However, the wavelength of the incident light to be measured must be known beforehand and it mostly depends on auxiliary methods to filter unknown wavelengths. Herein, an alternative but simple mechanism that is using a monolithic, bandgap-engineered photoferroelectric ceramic to blindly determine the wavelength and intensity of incident light at the same time is demonstrated. The photoferroelectric compound is Ba- and Ni-codoped (K,Na)NbO₃ exhibiting a direct bandgap of ≈2 eV and a spontaneous polarization of ≈0.25 C m⁻². The band–band charge carrier transition is confirmed by multiple characterization methods of photoluminescence, photodielectric spectroscopy, and photoconductivity. The existent optoelectrical cumulative effect enabled by the simultaneous narrow bandgap and strong ferroelectricity allows to reliably distinguish the wavelengths of 405, 552, and 660 nm as well as the power density ranging from ≈0.1 to 10 W cm⁻², with the photoresponsivity of up to 60 μA W⁻¹. Consequently, this work proposes an alternative to semiconductor-based counterparts for filterless, wavelength-selective photodetection and color sensing.