M. Nguyen Thi, “Metal-dielectric phase transition of VO2 assisted broadband and high-efficiency bifunctional metasurface in the terahertz frequency: Metal-dielectric phase transition of VO2 assisted broadband and high-efficiency bifunctional metasurface”, Vietnam J. Sci. Technol., vol. 60, no. 6, pp. 1078–1086, Dec. 2022.
Metal-dielectric phase transition of VO2 assisted broadband and high-efficiency bifunctional metasurface in the terahertz frequency
|Author:||Nguyen Thi, Minh1,2; Nguyen Thi Kim, Thu1,2; Nguyen, Thi Hong Van1;|
1Graduate University of Science and Technology, Vietnam Academy of Science and Technology, Ha Noi, Viet Nam, 18 Hoang Quoc Viet, Cau Giay, Ha Noi, Viet Nam
2School of Engineering and Technology, Vinh University, 182 Le Duan, Nghe An, Viet Nam
3Centre for Wireless Communications, University of Oulu. 90570 Oulu, Finland
|Online Access:||PDF Full Text (PDF, 0.9 MB)|
|Persistent link:|| http://urn.fi/urn:nbn:fi-fe2023030930869
Vietnam Academy of Science and Technology,
|Publish Date:|| 2023-03-09
The integration of multiple varied functionalities into a single and compact EM-based device is greatly demanded in EM integration due to their miniaturized configurations. In this paper, a broadband and high-efficiency bifunctional metasurface employing vanadium dioxide (VO₂) is proposed for the terahertz (THz) frequencies. Due to the dielectric-to-metal transition of VO₂, the metasurface can be dynamically tuned from a reflecting surface to a broadband absorber under low-temperature conditions. When VO₂ is in the dielectric phase, the designed metasurface shows excellent reflection (> 96 %) in a broad frequency range from 0.5 THz to 4.5 THz. Once VO₂ is heated up and transited to its metal phase, the proposed metasurface structure efficiently absorbs normally incident EM waves in the frequency range of 1.29 THz to 3.26 THz with an average absorption of 94.3 %. Moreover, the high absorption characterization of the proposed metasurface is maintained with a wide incident angle and is polarization-insensitive due to its symmetric structure, which makes it suitable for THz applications.
Vietnam journal of science and technology
|Pages:||1078 - 1086|
|Type of Publication:||
A1 Journal article – refereed
|Field of Science:||
213 Electronic, automation and communications engineering, electronics
This research is supported by the Ministry of Education and Training, Viet Nam (Grant No. B2021-TDV-05).
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